M55D4G32128A-CDBIG2R

The M55D4G32128A-CDBIG2R from ESMT is a JEDEC-compliant LPDDR3 SDRAM organized as 128M×32 (4Gb) with an 800 MHz clock rate. Designed for industrial-grade applications, it delivers high-speed, low-voltage memory in a compact 178-ball BGA package with Pb-free construction.

With an industrial operating range of −40°C to 85°C, dual-voltage domains, eight internal banks and advanced power-management features, this device targets embedded systems requiring robust, low-power, and high-concurrency DRAM performance.

Key Features

• Memory Organization  4.295 Gbit capacity configured as 128M×32 with eight internal banks and a 4 KB page size for concurrent access patterns.
• Performance  800 MHz clock frequency (1600 Mb/s/pin data rate) with supported read latencies and write latencies appropriate for the ordering option (this device: RL = 12, WL = 6) and an eight-beat burst length (BL = 8).
• Low-Voltage Operation  Dual supply domains: VDD1 = 1.70–1.95 V and VDD2 / VDDCA / VDDQ = 1.14–1.30 V to minimize power consumption while supporting high-speed DDR transfers.
• Timing and Data Integrity  Fast access characteristics (spec sheet access time listed at 5.5 ns) and write cycle timing (15 ns for word/page) with DDR command/address timing and per-byte DQS support.
• Advanced Memory Controls  Features include on-die termination (ODT), programmable drive strength (DS), auto temperature compensated self refresh (ATCSR), auto/power and partial-array self refresh (PASR), per-bank refresh and bank/segment masking.
• Training and Leveling  Command/Address (CA) training and write leveling support for timing alignment of CA, DQ, DQS and DM signals.
• Power Modes  Supports deep power-down (DPD), auto refresh, self refresh and other low-power states to optimize energy use in duty-cycled systems.
• Package and Environmental  178-ball BGA (10.0 × 11.5 mm) surface-mount package, Pb-free, JEDEC LPDDR3-compliant and rated for industrial temperature operation (−40°C to 85°C).
• Reliability  JEDEC qualification and refresh architecture (8192 refresh cycles per 32 ms, average refresh period 3.9 µs) appropriate for continuous industrial operation.

Typical Applications

• Industrial Embedded Systems  High-speed volatile memory for controllers, gateways and instrumentation that require industrial temperature operation and low-voltage power domains.
• Communications and Networking Equipment  Packet buffering and working memory in network modules where concurrent bank operation and fast DDR transfers improve throughput.
• High-Density Embedded Memory  On-board DRAM for compute modules and compact systems that require a small BGA footprint and Pb-free assembly.

Unique Advantages

• Industrial Temperature Rating:  Rated −40°C to 85°C to support deployment in harsh and thermally variable environments.
• Low-Voltage Dual Domains:  Separate core and I/O supply ranges (1.70–1.95 V and 1.14–1.30 V) to reduce overall power draw while maintaining high-speed operation.
• High Concurrency:  Eight internal banks with per-bank refresh enable overlapping operations and improved effective throughput for multitasking workloads.
• Comprehensive Power Management:  Features such as ATCSR, PASR and deep power-down provide a range of low-power states for energy-efficient designs.
• JEDEC Compliance and Pb-free Package:  Industry-standard LPDDR3 compliance and a 178-BGA Pb-free package simplify integration into verified design flows and manufacturing processes.
• Signal Training and Leveling:  CA training and write leveling facilitate reliable timing alignment in multi-board or high-speed layouts.

Why Choose M55D4G32128A-CDBIG2R?

The M55D4G32128A-CDBIG2R combines LPDDR3 performance and low-voltage efficiency with industrial-grade robustness. Its 4 Gb capacity in a compact 178-BGA, JEDEC-compliant LPDDR3 architecture is suited to embedded and networked systems that need reliable high-speed working memory across a wide temperature range.

Engineers and procurement teams will find this device appropriate for designs that require a balance of high concurrency, advanced power-management modes and manufacturing-friendly Pb-free packaging, backed by ESMT’s LPDDR3 feature set.

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