M55D4G16256A-EEBG2R

4Gb LPDDR3 SDRAM
Part Description

LPDDR3 SDRAM 4Gb (256M×16) 933MHz 1.8V/1.2V 178-BGA, Pb-free

Quantity 1,123 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package178-BGA (10x11.5)Memory FormatDRAMTechnologyDRAM
Memory Size4 GbitAccess Time5.5 nsGradeCommercial
Clock Frequency933 MHzVoltage1.14V ~ 1.30V, 1.70V ~ 1.95VMemory TypeVolatile
Operating Temperature-25°C – 85°CWrite Cycle Time Word Page15 nsPackaging178-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization256M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.36

Overview of M55D4G16256A-EEBG2R – LPDDR3 SDRAM 4Gb (256M×16) 933MHz 1.8V/1.2V 178-BGA, Pb-free

The M55D4G16256A-EEBG2R is a 4.295 Gbit LPDDR3 SDRAM organized as 256M × 16 bits. It implements an LPDDR3, double-data-rate architecture with eight internal banks and a 4 KB page size, providing JEDEC LPDDR3-compliant memory in a compact 178-ball BGA package.

Designed for systems that require low-voltage, high-throughput DRAM, this device offers flexible timing and power-management features—enabling integration into designs where compact surface-mount memory and multiple low-power modes are required.

Key Features

  • Core / Memory Organization  4.295 Gbit capacity organized as 256M × 16 with eight internal banks and a 4 KB page size; row addresses R0–R13 and column addresses C0–C10.
  • Performance  Rated for 933 MHz operation with a corresponding 1866 Mb/s data rate (DDR) for this part number; typical access time 5.5 ns and write cycle time (word page) 15 ns.
  • Latency / Burst  Configured with Read Latency (RL) = 14 and Write Latency (WL) = 8 for the EEBG2R ordering option; supports burst length (BL) = 8 and sequential burst type.
  • Low-Voltage Supplies  Supports dual supply ranges: 1.70 V–1.95 V and 1.14 V–1.30 V, enabling ultra-low-voltage core and I/O operation as defined for LPDDR3.
  • Power Management & Reliability  Includes auto refresh, self refresh, per-bank refresh, auto temperature compensated self refresh (ATCSR), partial-array self refresh (PASR), and deep power-down (DPD) modes.
  • Interface & Training  Double data rate command/address inputs, differential clock inputs (CK_t/CK_c), per-byte bidirectional DQS, data mask (DM), CA training and write leveling for timing adjustment.
  • Signal Integrity & Drive  On-die termination (ODT) and programmable drive strength (DS) are supported to assist interface tuning.
  • Package & Mounting  Pb‑free 178-ball BGA (10 × 11.5 mm) in a surface-mount package; commercial grade with JEDEC qualification.
  • Operating Range  Specified operating temperature range: −25 °C to 85 °C. RoHS-compliant.

Typical Applications

  • JEDEC LPDDR3 memory implementations  Use as a 4Gb LPDDR3 SDRAM component in designs requiring JEDEC-compliant DDR memory with RL = 14 / WL = 8 timing.
  • Compact surface-mount memory modules  Ideal where a 178-ball BGA package and surface-mount assembly are required for board-level memory integration.
  • Low-voltage DRAM designs  Suitable for systems that require dual low-voltage supplies (1.70–1.95 V and 1.14–1.30 V) and support LPDDR3 power modes such as deep power-down and self-refresh.

Unique Advantages

  • LPDDR3-compliant architecture  JEDEC LPDDR3 feature set including eight-bank operation, DDR command/address timing and per-byte DQS ensures predictable LPDDR3 behavior.
  • High DDR throughput for the class  Rated at 933 MHz (1866 Mb/s data rate for this device), enabling high-bandwidth transfers within the part’s specified timing.
  • Comprehensive low-power modes  Auto refresh, self refresh, ATCSR, PASR and deep power-down options provide multiple strategies to reduce standby power and manage thermal load.
  • Interface tuning features  CA training, write leveling, programmable drive strength and ODT support robust timing alignment and signal integrity tuning on the bus.
  • Compact, lead‑free package  178-ball BGA (10 × 11.5 mm) Pb‑free package supports dense board designs and surface-mount assembly processes.
  • Design-grade specification  Commercial grade with JEDEC qualification and RoHS compliance for standard industrial and commercial product lifecycles.

Why Choose M55D4G16256A-EEBG2R?

The M55D4G16256A-EEBG2R provides a JEDEC-compliant LPDDR3 memory solution that combines 4.295 Gbit density, DDR operation at 933 MHz, and flexible timing (RL = 14, WL = 8) in a compact 178-BGA surface-mount package. Its low-voltage supply ranges and extensive power-management features make it a practical choice where low-power DRAM behavior and interface tuning (CA training, write leveling, ODT) are required.

This part is suited to designers who need verifiable LPDDR3 performance parameters, a compact BGA footprint, and a set of low-power and refresh modes documented for reliable integration into commercial-grade products.

Request a quote or submit an inquiry to get pricing and availability for the M55D4G16256A-EEBG2R and to discuss sample quantities or volume purchasing options.

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