M55D1G3232A-EEBIG2Y

The M55D1G3232A-EEBIG2Y is a 1.074 Gbit LPDDR3 SDRAM device organized as 32M × 32 with eight internal banks and a 4KB page size. It is a JEDEC-compliant LPDDR3 memory in a 178-ball BGA (10 × 11.5 mm) package, rated for industrial temperature operation from -40 °C to 85 °C and supplied as a Pb-free device.

This device supports a 933 MHz clock (device variant) with a data rate of 1866 Mb/s per pin, low-voltage core and I/O supplies, and standard LPDDR3 features such as on-die termination, write leveling, CA training and per-bank refresh for concurrent operation.

Key Features

• Memory Organization: 1.074 Gbit implemented as 32M × 32 with eight internal banks and a 4KB page size, providing standard LPDDR3 addressing (R0–R12, C0–C8).
• Performance: 933 MHz device clock with an effective data rate of 1866 Mb/s per pin; read latency configured as RL = 14 and write latency WL = 8 for this variant.
• Timing: Fast access characteristics with an access time of 5.5 ns and a write cycle time (word page) of 15 ns.
• Power Supply: Dual-voltage operation with VDD1 (1.70–1.95 V) and VDD2/VDDCA/VDDQ (1.14–1.30 V), enabling low-voltage core and I/O operation typical of LPDDR3 architectures.
• LPDDR3 Interface & Training: Double data rate command/address inputs, differential clock inputs, bidirectional/differential DQS per byte, with CA training and write leveling support for timing adjustment.
• Data Handling: Eight-bit prefetch DDR architecture, burst length of 8 and sequential burst type (BL = 8, BT = sequential) for sustained transfers.
• Refresh & Power Management: Auto refresh, self refresh, per-bank refresh, Auto Temperature Compensated Self Refresh (ATCSR), Partial-Array Self Refresh (PASR) and Deep Power-Down (DPD) modes.
• Signal & Drive Controls: On-die termination (ODT) and programmable drive strength (DS); data mask (DM) supported for write data.
• Package & Qualification: 178-ball BGA (10 × 11.5 mm), JEDEC LPDDR3-compliant, Pb-free, industrial-grade temperature range (-40 °C to 85 °C).

Unique Advantages

• Industrial Temperature Range: Rated for -40 °C to 85 °C to support designs requiring extended ambient operation.
• Low-Voltage Operation: Separate core and I/O voltage domains (1.70–1.95 V and 1.14–1.30 V) to optimize power consumption for LPDDR3 system architectures.
• High Throughput Variant: 933 MHz clocking and 1866 Mb/s per pin data rate address applications needing elevated memory bandwidth within the LPDDR3 family.
• Robust Memory Management: Per-bank refresh, ATCSR and PASR provide flexible refresh strategies and reduced power during idle periods.
• Signal Integrity & Timing Support: CA training, write leveling and ODT improve timing margin and ease interface timing convergence on high-speed systems.
• Compact, Pb-free Package: 178-ball BGA in a 10 × 11.5 mm footprint offers a compact solution with Pb-free manufacturing compliance.

Why Choose M55D1G3232A-EEBIG2Y?

The M55D1G3232A-EEBIG2Y positions itself as a JEDEC-compliant LPDDR3 memory option for industrial designs that require 1 Gb density, multi-bank concurrency and LPDDR3 feature sets—delivering a balance of bandwidth, low-voltage operation and extended temperature tolerance. Its combination of CA training, write leveling, ODT and programmable drive strength helps integrators manage high-speed interface timing and signal integrity.

This variant is suited to engineers and procurement teams seeking a Pb-free, industrial-grade LPDDR3 device with a 178-BGA package, predictable timing parameters (RL/WL), and refresh/power-management capabilities to match embedded and board-level memory requirements.

Request a quote or submit a procurement inquiry to receive pricing, availability and ordering information for the M55D1G3232A-EEBIG2Y.