M55D1G3232A-CDBG2Y

The M55D1G3232A-CDBG2Y is a JEDEC-compliant LPDDR3 SDRAM device providing 1.074 Gbit of volatile DRAM in a 32M×32 organization with eight internal banks. This module implements double data rate operation and an eight-bit prefetch DDR architecture to support burst-based high-throughput memory access patterns.

Designed for low-voltage operation, the device supports separate core and I/O supply ranges and is supplied in a compact 178-ball BGA (10×11.5 mm) package. Key timing and power-management features from the LPDDR3 specification are implemented to support efficient system memory designs.

Key Features

• Memory Capacity & Organization — 1.074 Gbit organized as 32M × 32 with eight internal banks and a 4 KB page size.
• Performance & Timing — Rated for 800 MHz operation (data rate 1,600 Mb/s per pin) for this ordering option; access time 5.5 ns, write cycle time (word page) 15 ns. Read latency and write latency settings for this device include RL = 12 and WL = 6.
• LPDDR3 DDR Interface — Double data rate command/address inputs, bidirectional/differential per-byte DQS, differential clock inputs (CK_t/CK_c), burst length = 8 and sequential burst type.
• Low-Voltage Power Domains — Separate supply ranges: VDD1 = 1.70–1.95 V and VDD2 / VDDCA / VDDQ = 1.14–1.30 V to enable low-voltage core and I/O operation.
• Power Management — Auto refresh, self-refresh, auto temperature compensated self refresh (ATCSR), partial-array self refresh (PASR), and deep power-down (DPD) modes for reduced standby power.
• Signal Integrity & Training — On-die termination (ODT), programmable drive strength (DS), command/address (CA) training and write leveling for timing adjustment between clock and data lines.
• Refresh & Reliability — Per-bank refresh for concurrent operation; refresh cycles 4,096 cycles/32 ms with an average refresh period of 7.8 μs.
• Package & Environmental — Pb-free 178-ball BGA (10×11.5 mm) surface-mount package; operating temperature range −25 °C to 85 °C; RoHS compliant.

Typical Applications

• Embedded memory subsystems — Implement a 1Gb LPDDR3 memory element with 32M×32 organization and eight banks for system memory requirements.
• Low-voltage designs — Take advantage of separate 1.70–1.95 V and 1.14–1.30 V supply domains for power-sensitive memory systems.
• High-throughput burst access — Use the device’s DDR interface, BL = 8 bursts, and eight-bit prefetch architecture to support burst-oriented data transfers.

Unique Advantages

• JEDEC LPDDR3 compliance — Ensures conformance with LPDDR3 signaling, timing options and power-management features as documented in the datasheet.
• Low-voltage operation — Separate core and I/O voltage ranges (VDD1 and VDD2/VDDCA/VDDQ) enable reduced power consumption in multi-voltage systems.
• Advanced timing controls — Multiple read-latency options and programmable drive strength combined with CA training and write leveling provide flexible timing tuning for system integration.
• Concurrent bank operation — Eight internal banks and per-bank refresh support improve effective memory concurrency for interleaved access patterns.
• Compact, production-ready package — Pb-free 178-BGA (10×11.5) surface-mount package with industrial temperature range facilitates compact board-level integration.

Why Choose M55D1G3232A-CDBG2Y?

The M55D1G3232A-CDBG2Y delivers a JEDEC-compliant LPDDR3 memory building block with defined timing options (RL = 12, WL = 6 for this ordering code), low-voltage core and I/O supplies, and a full set of LPDDR3 power-management features such as ATCSR, PASR and deep power-down. Its 32M×32 organization and eight-bank architecture provide predictable performance characteristics for designers implementing LPDDR3 memory subsystems.

This device is suited to designs that require a compact BGA memory package, precise timing control via CA training and write leveling, and adherence to LPDDR3 functional features as documented in the datasheet. The combination of low-voltage supplies, on-die termination and refresh options supports integration into power-aware system architectures.

Request a quote for M55D1G3232A-CDBG2Y or submit a purchase inquiry to obtain availability, lead times and pricing information.