M55D1G3232A-EEBG2Y

The M55D1G3232A-EEBG2Y is a JEDEC‑compliant LPDDR3 SDRAM device organized as 32M × 32 (1.074 Gbit) and specified for 933 MHz operation (1866 Mb/s per pin). It implements an eight‑bank, 4KB page architecture with DDR burst operation and a range of on‑die features for timing adjustment and power management.

This device targets memory subsystems that require low‑voltage core and I/O supplies, flexible latency options, and compact BGA packaging—delivering a combination of density, interface flexibility, and power modes for embedded and system designs operating across a commercial temperature range.

Key Features

• Memory Organization 32M × 32 organization (1.074 Gbit) with eight internal banks and a 4KB page size for parallel and concurrent bank operation.
• High‑speed DDR Interface Double Data Rate command/address inputs and supported data rates up to 933 MHz (1866 Mb/s per pin) with burst length 8 and selectable read latencies (RL options include 3, 6, 8, 9, 10, 11, 12, 14, 16).
• Low‑voltage Power Domains Differential clock VDD1 = 1.70–1.95 V and core/I/O supplies VDD2, VDDCA, VDDQ = 1.14–1.30 V to support ultra‑low‑voltage operation.
• Timing and Training Features Command/Address (CA) training, write leveling for clock‑to‑DQ/DQS/DM timing, and programmable drive strength to assist timing margin optimization.
• Data Integrity and I/O Bidirectional/differential DQS per byte, data mask (DM) for write data, and on‑die termination (ODT) for signal integrity.
• Power Management Auto refresh, self refresh, per‑bank refresh, Auto Temperature Compensated Self Refresh (ATCSR), Partial Array Self Refresh (PASR), and Deep Power‑Down (DPD) modes.
• Reliability Options Bank masking and segment masking for selective refresh and operation, plus JEDEC LPDDR3 compliance for predictable behavior across designs.
• Package and Temperature 178‑ball BGA (10 × 11.5 mm) Pb‑free package, rated for commercial operation from −25 °C to 85 °C and surface‑mount assembly.

Typical Applications

• Memory subsystems requiring 1Gb density Designs that need a 1.074 Gbit LPDDR3 device organized as 32M × 32 can use this part for compact memory arrays.
• High‑throughput interfaces Systems targeting 933 MHz (1866 Mb/s per pin) data rates and DDR burst transfers benefit from the device’s high‑speed interface and burst‑length 8 operation.
• Low‑voltage embedded designs Applications that require separate differential clock and core/I/O low‑voltage domains can leverage the specified VDD1 and VDD2/VDDQ voltage ranges.

Unique Advantages

• JEDEC LPDDR3 compliance: Ensures consistent behavior and interoperability with LPDDR3 system designs.
• Flexible timing control: Multiple read‑latency options and write‑leveling/CA training enable tuning for different board and system timing environments.
• Comprehensive low‑power modes: ATCSR, PASR, per‑bank refresh and deep power‑down reduce static power and enable selective refresh strategies.
• Signal integrity features: Differential DQS per byte, data mask, and on‑die termination support robust high‑speed data transfers.
• Compact, Pb‑free BGA packaging: 178‑ball BGA (10 × 11.5 mm) offers a small footprint with surface‑mount compatibility for space‑constrained boards.
• Wide operating voltage windows: Separate voltage domains (1.70–1.95 V and 1.14–1.30 V) enable power management and system partitioning.

Why Choose M55D1G3232A-EEBG2Y?

The M55D1G3232A-EEBG2Y provides a JEDEC‑compliant LPDDR3 memory building block that balances 1Gb density, high‑speed DDR operation at 933 MHz, and low‑voltage domain flexibility. Its suite of timing training, power management, and signal‑integrity features makes it suitable for designs that require tunable interface timing and selective power modes while maintaining a compact BGA footprint.

This device is well suited to engineers and procurement teams specifying LPDDR3 memory for systems that demand controlled timing options, advanced refresh/power modes, and a Pb‑free 178‑ball package within a commercial temperature range.

Request a quote or submit a purchase inquiry to obtain pricing, lead‑time, and availability for the M55D1G3232A-EEBG2Y.