M55D1G3232A-CDBIG2Y

The M55D1G3232A-CDBIG2Y from ESMT is a 1.074 Gbit LPDDR3 SDRAM device organized as 32M × 32 with an 800 MHz clock (data rate 1600 Mb/s per pin). It implements JEDEC LPDDR3 architecture with eight internal banks, an 8-beat burst length and eight-bit prefetch for double-data-rate transfer.

Designed for industrial-grade applications, the device supports dual-voltage operation (VDD1 = 1.70–1.95 V; VDD2 / VDDCA / VDDQ = 1.14–1.30 V), is supplied in a 178‑BGA (10 × 11.5 mm) surface-mount package, and is rated for operation from −40 °C to 85 °C. The part is Pb-free and JEDEC-qualified for LPDDR3 use.

Key Features

• Core & Memory Organization 1.074 Gbit capacity organized as 32M × 32 with eight internal banks and a 4 KB page size.
• Performance & Timing 800 MHz clock frequency (1600 Mb/s per pin), burst length 8, read latency (RL) = 12 and write latency (WL) = 6 for this ordering option.
• Voltage & Power Ultra-low-voltage supplies: VDD1 = 1.70–1.95 V and VDD2 / VDDCA / VDDQ = 1.14–1.30 V for core and I/O domains.
• Refresh & Self-Refresh Supports auto refresh, self refresh, per-bank refresh, Auto Temperature Compensated Self Refresh (ATCSR), partial-array self refresh (PASR); refresh cycles 4,096/32 ms with average refresh period 7.8 µs.
• Low-Power Modes Deep power-down (DPD) and other power-management modes to reduce standby current.
• Interface & Training Differential clock inputs (CK_t/CK_c), bidirectional/differential DQS per byte, CA training and write leveling for timing adjustment, programmable drive strength and on‑die termination (ODT).
• Package & Temperature 178‑BGA (10 × 11.5 mm) surface-mount package; industrial operating temperature range −40 °C to 85 °C; RoHS-compliant Pb-free construction.
• Standards JEDEC LPDDR3-compliant feature set including eight internal banks, eight-bit prefetch DDR architecture, auto precharge and per-bank refresh.

Typical Applications

• Industrial Embedded Systems Memory for embedded controllers and processing modules requiring industrial temperature operation and LPDDR3 performance.
• LPDDR3‑Compliant Platforms Integration into LPDDR3-compatible designs requiring 1 Gb density with a 32-bit data organization and standard LPDDR3 timing features.
• Communications & Networking Modules Buffering and packet-processing memory in modules where per-bank refresh, fast burst transfers and programmable drive strength are needed.

Unique Advantages

• Industrial Temperature Range Rated −40 °C to 85 °C to support a wide range of industrial environments.
• Dual Voltage Domains Separate core and I/O voltage ranges (1.70–1.95 V and 1.14–1.30 V) enable low-voltage operation and system power optimization.
• JEDEC LPDDR3 Compatibility Standardized LPDDR3 feature set simplifies integration into existing LPDDR3 designs and test flows.
• Flexible Timing & Training CA training and write leveling plus programmable drive strength and ODT help tune signal integrity and timing on complex boards.
• Compact BGA Footprint 178‑BGA (10 × 11.5 mm) surface-mount package supports high-density PCB layouts.

Why Choose M55D1G3232A-CDBIG2Y?

The M55D1G3232A-CDBIG2Y delivers JEDEC-compliant LPDDR3 functionality in a 1 Gb density optimized for industrial applications. Its combination of 800 MHz operation (1600 Mb/s per pin), multi-bank architecture, and programmable interface features provides designers with a predictable memory building block for LPDDR3 platforms.

With industrial temperature rating, low-voltage operation, and Pb-free 178‑BGA packaging, this ESMT device is positioned for designs that require robust performance, flexible timing control and compact board-level integration.

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