M55D1G1664A-GFBIG2Y

The M55D1G1664A-GFBIG2Y from ESMT is a JEDEC-compliant LPDDR3 SDRAM device providing 1.074 Gbit of volatile memory in a 64M × 16 organization. It implements an 8-bank, eight-bit prefetch DDR architecture with double data rate transfers and is supplied in a 178-ball BGA package suitable for industrial-grade designs.

Targeted for industrial applications, this device delivers high data-rate operation (1066 MHz / 2133 Mb/s per pin), low-voltage core and I/O operation, and extended temperature support to meet embedded system requirements that demand reliable memory performance across -40°C to 85°C.

Key Features

• Memory Organization and Capacity — 1.074 Gbit total capacity organized as 64M × 16 (documented as 8M × 16 × 8 banks) with a 4KB page size for efficient burst accesses.
• High-Speed DDR Interface — Rated for 1066 MHz clock frequency with a 2133 Mb/s per-pin data rate and double data rate, supporting burst length 8 and sequential burst type.
• Low-Voltage Power Domains — Ultra-low-voltage core and I/O supplies: VDD1 = 1.70–1.95V and VDD2 / VDDCA / VDDQ = 1.14–1.30V to support power-sensitive designs.
• Timing and Performance Options — Read latency (RL) options include 3, 6, 8, 9, 10, 11, 12, 14, and 16; write latency (WL) options include 6–8 depending on device variant.
• Robust LPDDR3 Interface Features — Differential clock inputs (CK_t/CK_c), per-byte DQS, data mask (DM), CA training, write leveling, on-die termination (ODT), and programmable drive strength (DS) for signal integrity and timing tuning.
• Power and Refresh Management — Supports auto refresh, self refresh, auto temperature compensated self refresh (ATCSR), per-bank refresh for concurrent operation, partial-array self refresh (PASR), and deep power-down (DPD) modes.
• Industrial-Grade Packaging and Compliance — 178-ball BGA package (10 × 11.5 mm footprint), JEDEC LPDDR3-compliant, Pb-free and RoHS-compliant, with operation from -40°C to 85°C.

Typical Applications

• Industrial embedded systems — Provides LPDDR3-class memory capacity and extended temperature range for industrial controllers and instrumentation.
• Memory for space-constrained designs — High-density 1 Gb capacity in a 178-BGA package for compact embedded assemblies.
• Systems requiring high data throughput — 1066 MHz clocking and 2133 Mb/s per-pin data rate support designs that need fast burst transfers and DDR operation.

Unique Advantages

• High sustained throughput: 1066 MHz clocking with DDR operation and 2133 Mb/s per pin enables rapid data transfer for burst-oriented workloads.
• Flexible timing configuration: Multiple RL and WL options allow designers to tune latency and timing for target systems and controller compatibility.
• Low-voltage domains: Separate VDD1 and VDD2/VDDCA/VDDQ ranges reduce overall power draw while preserving signal integrity and performance.
• Advanced interface controls: CA training, write leveling, per-byte DQS, and programmable drive strength simplify timing calibration and improve reliability across boards.
• Industrial environmental rating: Specified operation from -40°C to 85°C and Pb-free RoHS compliance support long-term deployment in temperature-challenging environments.
• Power management features: On-die refresh options (auto refresh, self refresh, ATCSR, PASR) and deep power-down modes help manage energy use in standby and active states.

Why Choose M55D1G1664A-GFBIG2Y?

The M55D1G1664A-GFBIG2Y positions itself as a practical LPDDR3 memory option for industrial-grade embedded designs that require a balance of high data rate, configurable timing, and low-voltage operation. Its JEDEC-compliant LPDDR3 feature set—including CA training, write leveling, on-die termination, and per-bank refresh—provides designers with the control needed to integrate reliable high-speed memory into constrained or temperature-challenging systems.

With a compact 178-BGA package, Pb-free compliance, and an operating range from -40°C to 85°C, this device is suitable for engineers specifying LPDDR3 memory where extended temperature tolerance, configurable interface timing, and power-managed operation are required.

Request a quote or submit a purchase inquiry for the M55D1G1664A-GFBIG2Y to evaluate availability and lead times for your next industrial memory design.