M55D1G1664A-EEBG2Y

The M55D1G1664A-EEBG2Y is a 1.074 Gbit LPDDR3 SDRAM organized as 64M × 16 with eight internal banks and a 4KB page size. It implements an eight-bit prefetch DDR architecture with double data-rate command/address inputs and supports burst length 8, providing high-bandwidth volatile memory in a compact 178-ball BGA package.

Designed for low-voltage operation (VDD1 = 1.70–1.95 V; VDD2, VDDCA, VDDQ = 1.14–1.30 V) and JEDEC LPDDR3 compliance, this device targets systems that require high data throughput, low-power core and I/O supplies, and surface-mount BGA packaging with Pb-free materials.

Key Features

• Memory Organization & Capacity — 1.074 Gbit organized as 64M × 16 with eight internal banks and a 4KB page size for concurrent bank operation.
• Performance — 933 MHz clock frequency (device variant) delivering a 1866 Mb/s per-pin data rate with selectable read latencies (RL up to 16 supported in the family) and WL = 8 for this ordering option.
• DDR Architecture & Burst — Eight-bit prefetch DDR architecture with Burst Length = 8 and Sequential burst type for efficient block transfers.
• Power Domains — Ultra-low-voltage core and I/O supplies: VDD1 = 1.70–1.95 V and VDD2/VDDCA/VDDQ = 1.14–1.30 V for reduced power consumption.
• Timing & Access — Typical access time 5.5 ns and write cycle time (word page) of 15 ns, supporting responsive memory operations.
• Robust Refresh & Low-Power Modes — Auto refresh, self-refresh, per-bank refresh, Auto Temperature Compensated Self Refresh (ATCSR), Partial-Array Self Refresh (PASR), and Deep Power-Down (DPD) support.
• Training & Calibration — Command/Address (CA) training and write leveling features for timing adjustment of CA, DQ, DQS, and DM signals.
• Signal Integrity & Drive — On-die termination (ODT), programmable drive strength (DS), and differential data strobe (DQS) support for reliable high-speed interfaces.
• Package & Environmental — 178‑BGA (10 × 11.5 mm) surface-mount package, Pb-free and RoHS compliant; operating temperature range −25 °C to 85 °C.

Typical Applications

• High‑Bandwidth Memory Subsystems — Use as system DRAM where a 1.074 Gbit LPDDR3 device with 1866 Mb/s per-pin data rate is required for bursty, high-throughput transfers.
• Low‑Power Embedded Platforms — Suitable for designs needing ultra-low-voltage core and I/O supplies (1.14–1.30 V and 1.70–1.95 V) to reduce power draw during active operation.
• Compact Surface‑Mount Designs — 178‑BGA package supports dense, surface-mount board layouts in space-constrained systems.

Unique Advantages

• JEDEC LPDDR3 Compliance: Ensures predictable behavior and interoperability by adhering to industry LPDDR3 timing, refresh, and interface conventions.
• Low‑Voltage Multi‑Domain Power: Separate core and I/O voltage domains (VDD1 and VDD2/VDDQ/VDDCA) enable optimized power management across system states.
• Comprehensive Low‑Power Modes: ATCSR, PASR, self-refresh, and deep power-down options reduce standby energy and support varied refresh strategies.
• Timing Calibration Features: CA training and write leveling improve timing margins for high-speed DQ/DQS operation and system integration.
• Package and Compliance: Pb-free 178‑BGA package with RoHS compliance and a commercial operating range of −25 °C to 85 °C for broad application support.
• Refresh Granularity: Per-bank refresh and bank/segment masking provide flexibility for concurrent operation and power/performance trade-offs.

Why Choose M55D1G1664A-EEBG2Y?

The M55D1G1664A-EEBG2Y combines LPDDR3 architecture with low-voltage core and I/O domains, JEDEC compliance, and on-die features such as ODT and programmable drive strength to deliver a verifiable, engineer-friendly DRAM building block. Its organization (64M × 16, eight banks), 933 MHz device clock, and burst-oriented DDR transfer characteristics make it appropriate for designs that require compact, high-throughput volatile memory in a surface-mount BGA form factor.

With built-in timing training, multiple low-power modes, and Pb-free RoHS-compliant packaging, this device is positioned for designers seeking a scalable memory option that balances bandwidth, power efficiency, and integration simplicity.

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