M55D1G1664A-CDBG2Y

The M55D1G1664A-CDBG2Y is a JEDEC‑compliant LPDDR3 SDRAM organized as 64M×16 (1.074 Gbit) with eight internal banks and a 4 KB page size. This low‑voltage DRAM device provides double‑data‑rate operation at an 800 MHz clock (1,600 Mb/s per pin) and supports industry LPDDR3 interface features for controlled timing and power management.

Designed to meet system requirements for low‑voltage, high‑bandwidth memory, the device integrates LPDDR3 features such as on‑die termination, programmable drive strength, write leveling and CA training, while offering a compact 178‑ball BGA package and commercial temperature range for general embedded and electronic designs.

Key Features

• Memory Organization: 1.074 Gbit total capacity arranged as 64M × 16 with eight internal banks and a 4 KB page size for concurrent bank operation and efficient row/column access.
• Performance: 800 MHz clock frequency delivering 1,600 Mb/s per pin (DDR) with supported read latencies (RL) including RL = 12 for this variant and write latency (WL) = 6; burst length (BL) = 8, sequential burst type.
• Timing: Typical access time 5.5 ns and write cycle time (word page) 15 ns for predictable timing behavior in memory subsystems.
• Low‑Voltage Power Domains: Ultra‑low‑voltage operation with VDD1 = 1.70–1.95 V (I/O/command clock) and VDD2 / VDDCA / VDDQ = 1.14–1.30 V (core and I/O), enabling low‑voltage system designs.
• Power and Refresh Management: Supports auto refresh, self refresh, per‑bank refresh, partial‑array self refresh (PASR), auto temperature compensated self refresh (ATCSR) and deep power‑down modes for flexible power management.
• Signal Integrity & Training: On‑die termination (ODT), programmable drive strength (DS), write leveling and CA training for clock/data timing alignment and reliable high‑speed operation.
• Interface & Architecture: Eight‑bit prefetch DDR architecture, differential clock inputs, bidirectional/differential data strobe per byte (DQS), data mask (DM) and HSUL_12 interface compatibility as defined for LPDDR3.
• Package & Compliance: Pb‑free 178‑ball BGA (10 × 11.5 mm footprint) with JEDEC LPDDR3 compliance and RoHS status compliant.
• Operating Range: Commercial operating temperature range from −25 °C to 85 °C for general electronics applications.

Typical Applications

• Memory subsystems for JEDEC LPDDR3 designs: Used where JEDEC‑compliant LPDDR3 DRAM is required to provide low‑voltage, double‑data‑rate memory.
• Low‑voltage system memory: Suited to designs that utilize separate core and I/O power domains with VDD1 and VDD2 voltage ranges as specified.
• High‑bandwidth buffering: Applied in systems needing DDR burst transfers (BL = 8) and selectable read/write latency options for throughput tuning.

Unique Advantages

• JEDEC LPDDR3 Compliance: Conforms to LPDDR3 feature set and signaling conventions for predictable interoperability with LPDDR3 platforms.
• Low‑Voltage Operation: Separate VDD1 and VDD2 domains with defined voltage ranges (VDD1 = 1.70–1.95 V; VDD2/VDDCA/VDDQ = 1.14–1.30 V) that support low‑power memory architectures.
• Flexible Timing Options: Read and write latency modes and the RL = 12 / WL = 6 configuration for this device enable designers to balance latency and signal integrity at 800 MHz operation.
• Advanced Power Controls: Features such as per‑bank refresh, PASR, ATCSR and deep power‑down provide granular control over refresh and power states to optimize energy use.
• Signal Robustness: On‑die termination and programmable drive strength help manage signal integrity at high data rates and during training sequences like write leveling and CA training.
• Compact, Lead‑Free Package: 178‑ball BGA (10 × 11.5 mm) offers a space‑efficient, Pb‑free footprint for surface‑mount assembly.

Why Choose M55D1G1664A-CDBG2Y?

The M55D1G1664A-CDBG2Y provides a JEDEC‑compliant LPDDR3 memory solution that combines low‑voltage operation, selectable latency modes and a comprehensive set of power‑management features. Its 1.074 Gbit organization (64M × 16), eight internal banks and DDR burst architecture deliver the predictable throughput and timing control required in LPDDR3 designs.

This variant is suitable for systems specifying 800 MHz LPDDR3 operation (1,600 Mb/s per pin) and offers on‑die termination, programmable drive strength and training capabilities to assist with high‑speed timing alignment. The compact 178‑ball BGA package and RoHS‑compliant construction support modern surface‑mount manufacturing and assembly needs.

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