M54D5123216A

The M54D5123216A is an LPDDR2 SDRAM device from ESMT offering a 536.9 Mbit volatile DRAM organized as 16M × 32 with 4 banks and a 4n prefetch architecture. It implements JEDEC LPDDR2-S4B features including a high-speed HSUL_12 interface, differential clocking, programmable latencies and burst lengths, and multiple low-power modes.

This device targets designs that require LPDDR2-class low-voltage DRAM functionality with support for up to 533 MHz clocking (1,066 Mb/s per pin) and flexible power-management features for reduced active and standby power.

Key Features

• Memory Capacity & Organization — 536.9 Mbit total, organized as 16M × 32 across 4 banks (S4 device).
• LPDDR2 Architecture — JEDEC LPDDR2-S4B compliant with 4n prefetch, programmable read/write latency (RL/WL) and programmable burst lengths (BL = 4, 8, 16).
• High-Speed Interface — HSUL_12 interface with differential clock inputs (CK_t / CK_c) and bidirectional/differential data strobe per byte (DQS_t / DQS_c).
• Performance — Maximum clock frequency up to 533 MHz (data rate 1,066 Mb/s per pin); access time 5.5 ns and write cycle time (word/page) 15 ns as specified.
• Power Domains — Power supply rails defined in the datasheet: VDD1 = 1.7 to 1.95 V and VDD2, VDDCA, VDDQ = 1.14 to 1.3 V (ordering option shown as 1.8V / 1.2V).
• Low-Power & Refresh — Supports Pre-bank Refresh for concurrent operation, Partial Array Self Refresh (PASR), Temperature Compensated Self Refresh (TCSR) via on-die temperature sensor, Deep Power Down (DPD) and clock stop capability.
• Programmability & Signal Integrity — Programmable driver strength (DS) to tune I/O behavior and support robust signal integrity in system designs.
• Package & Mounting — 134-ball BGA surface-mount package (top-view ball configuration and ball descriptions provided in datasheet).
• Operating Range & Compliance — Commercial grade, operating temperature −25°C to 85°C, JEDEC qualified and RoHS compliant.

Unique Advantages

• High-bandwidth LPDDR2 operation: Up to 533 MHz clocking (1,066 Mb/s per pin) enables increased throughput for memory-intensive tasks.
• Flexible latency and burst control: Programmable RL/WL and burst lengths (4/8/16) allow tuning for throughput versus latency trade-offs in system design.
• Comprehensive low-power modes: PASR, TCSR, DPD and clock stop capability reduce idle power and support energy-efficient operation.
• Robust signaling: Differential clock inputs and per-byte DQS strobes provide reliable timing for double data rate transfers.
• Compact surface-mount packaging: 134-ball BGA provides a small footprint suitable for space-constrained boards while supporting high-pin-count connectivity.
• Standards-based qualification: JEDEC LPDDR2 compliance and RoHS status support predictable integration and regulatory expectations.

Why Choose M54D5123216A?

The M54D5123216A delivers LPDDR2-class low-voltage DRAM functionality with a balance of bandwidth, programmability and power-saving features. Its 16M × 32 organization, 4-bank architecture and 4n prefetch design, together with programmable RL/WL and burst settings, enable designers to tailor memory timing and throughput to application needs.

With defined power rails, advanced refresh and self-refresh options, differential clocking and a 134-ball BGA surface-mount package, this JEDEC-qualified, RoHS-compliant device is positioned for commercial-grade designs that require LPDDR2 SDRAM integration backed by ESMT documentation and datasheet detail.

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