M54D2G3264A

2Gb LPDDR2 SDRAM
Part Description

LPDDR2 SDRAM 1.8V/ 1.2V

Quantity 197 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package134 Ball BGAMemory FormatDRAMTechnologyLPDDR2 SDRAM
Memory Size2 GbitAccess Time5.5 nsGradeCommercial
Clock Frequency533 MHzVoltage2.5VMemory TypeVolatile
Operating Temperature-25°C – 85°CWrite Cycle Time Word Page15 nsPackaging134 Ball BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 32
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.36

Overview of M54D2G3264A – LPDDR2 SDRAM 1.8V/ 1.2V

The M54D2G3264A from ESMT is an LPDDR2 SDRAM device delivered in a 134-ball BGA package. It implements a 4n prefetch architecture with an 8-bank organization and a 64M × 32 memory array, providing a 2.147 Gbit density for designs requiring low-voltage, double-data-rate DRAM.

Engineered with LPDDR2 features—including programmable read/write latencies, burst lengths, and low‑power modes—this device is suited for systems that demand high data throughput together with low-voltage operation and advanced refresh/power management capabilities.

Key Features

  • Standards & Compliance JEDEC LPDDR2-S4B compliance and JEDEC qualification are specified for the series.
  • Memory Organization & Density 2.147 Gbit total density implemented as 64M × 32 with 8 internal banks (S4 device type).
  • Performance Supports up to a 533 MHz clock (1066 Mb/s per pin data rate for the 1.8V/1.2V variant) with programmable read latency (RL) and write latency (WL) and selectable burst lengths of 4, 8, or 16.
  • Low-Power Supply Options Power supply ranges include VDD1 = 1.7–1.95 V and VDD2 / VDDCA / VDDQ = 1.14–1.3 V; the product listing also identifies a 1.8V / 1.2V supply variant.
  • Low-Power and Power Management Supports Deep Power Down (DPD), Partial Array Self Refresh (PASR), Temperature Compensated Self Refresh (TCSR) via an integrated temperature sensor, and clock stop capability.
  • Interface & Signaling HSUL_12 (High Speed Unterminated Logic 1.2V) interface, multiplexed DDR command/address inputs sampled on both edges of CK, and bidirectional differential data strobe per byte (DQS_t/DQS_c).
  • Refresh & Reliability Pre-bank refresh for concurrent operation and standard JEDEC refresh timing (tREFI) specifications for all-bank refresh within the temperature range.
  • Package & Mounting 134-ball BGA; package body 10.0 mm × 11.5 mm × 1.0 mm, 0.65 mm ball pitch; surface-mount device.
  • Operating Range & Environmental Commercial-grade device with operating temperature from −25 °C to 85 °C and RoHS compliance.

Typical Applications

  • Low-Voltage Memory Subsystems For designs requiring LPDDR2 density and low-voltage operation, leveraging the device’s 1.8V/1.2V supply characteristics and LPDDR2 features.
  • High-Bandwidth Embedded Designs Useful where double-data-rate operation and programmable latencies support bursty or sustained data transfers at up to 533 MHz clock rates.
  • Power-Sensitive Systems Suitable for systems that benefit from Deep Power Down, PASR, and Temperature Compensated Self Refresh to reduce standby energy use and optimize refresh behavior.

Unique Advantages

  • High-throughput LPDDR2 architecture: 4n prefetch, DDR command/address sampling and per-byte differential DQS provide efficient high-speed data handling.
  • Flexible timing control: Programmable RL and WL plus selectable burst lengths (4/8/16) let designers tune latency and throughput to application needs.
  • Comprehensive low-power modes: Deep Power Down, PASR and TCSR enable aggressive power management while preserving data integrity during idle periods.
  • JEDEC-qualified implementation: LPDDR2-S4B compliance and JEDEC qualification provide compatibility with established LPDDR2 system requirements.
  • Compact BGA package: 134-ball BGA with 0.65 mm pitch supports high-density board integration and surface-mount assembly.
  • Commercial operating range: Rated for −25 °C to 85 °C to meet typical commercial system requirements.

Why Choose M54D2G3264A?

The M54D2G3264A combines LPDDR2-standard performance and low-power capabilities in a compact 134-ball BGA package. With JEDEC LPDDR2 compliance, a 2.147 Gbit density in a 64M × 32 organization, and programmable performance parameters, it delivers configurable memory bandwidth and efficient power management for designs that require LPDDR2-class DRAM.

This device is appropriate for designers seeking an LPDDR2 memory component with programmable timing, advanced refresh/power options, and a defined commercial temperature range—providing a clear specification set for system integration and production planning.

Request a quote or submit an inquiry to receive pricing, availability, and ordering details for the M54D2G3264A LPDDR2 SDRAM. Include your required package variant and timing configuration when requesting a quote.

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