M54D1G3232A

The M54D1G3232A is an LPDDR2 SDRAM memory device from ESMT, organized as 32M × 32 with a memory capacity of 1.074 Gbit. It implements a LPDDR2 architecture with programmable latencies, high-speed DDR command/address inputs, and advanced low-power features documented in the product datasheet.

This device targets designs that require a compact, JEDEC-compliant LPDDR2 memory element offering up to 533 MHz clock operation (1,066 Mb/s per pin) and a commercial operating range of −25°C to 85°C.

Key Features

• Core / Architecture JEDEC LPDDR2-S4B compliance with 4n prefetch architecture and programmable read/write latencies (RL/WL) for flexible timing control.
• Memory Organization & Performance 1.074 Gbit capacity organized as 32M × 32; specified clock frequency up to 533 MHz and data rate up to 1,066 Mb/s per pin for the 1.8V/1.2V ordering variant.
• Timing & Access Access time listed at 5.5 ns with a write cycle time (word/page) of 15 ns enabling predictable memory timing for system design.
• Power Supply Options Documented power domains include VDD1 = 1.7–1.95 V and VDD2 / VDDCA / VDDQ = 1.14–1.3 V; ordering table shows a 1.8V / 1.2V variant (M54D1G3232A-1.8BKG).
• Low-Power & Retention Modes Supports Partial Array Self Refresh (PASR), Temperature Compensated Self Refresh (TCSR) via built-in sensor, Deep Power Down (DPD), and clock stop capability to reduce standby power.
• Refresh & Reliability Per-bank refresh for concurrent operation and programmable driver strength (DS) for signal integrity tuning.
• Interfaces & I/O HSUL_12 interface (High Speed Unterminated Logic 1.2V), multiplexed double data rate command/address inputs, and bidirectional differential data strobe per byte (DQS_t/DQS_c).
• Package & Mounting 134-ball BGA package (10 mm × 11.5 mm × 1.0 mm body, 0.65 mm ball pitch), surface-mount mounting for compact board-level integration.
• Environmental & Qualification JEDEC qualification and RoHS compliance; commercial grade operating temperature from −25°C to 85°C.

Unique Advantages

• JEDEC LPDDR2 compliance: Ensures standardized LPDDR2 behavior and interoperability as documented in the datasheet.
• High-speed data throughput: Up to 533 MHz clock and 1,066 Mb/s per pin (ordering variant) supports demanding memory bandwidth within the LPDDR2 class.
• Flexible low-voltage operation: Power domain specifications and an available 1.8V/1.2V variant enable lower-voltage system designs and optimized power profiles.
• Advanced power-management features: PASR, TCSR, DPD and clock stop capabilities allow designers to tailor standby and refresh behavior for reduced energy consumption.
• Compact BGA footprint: 134-ball BGA supports high-density board layouts while providing surface-mount compatibility.
• Commercial temperature range: Operation from −25°C to 85°C accommodates a wide range of standard embedded and consumer applications.

Why Choose M54D1G3232A?

The M54D1G3232A balances LPDDR2 performance, low-voltage operation, and industry-standard compliance in a compact 134 BGA package. With programmable latencies, per-bank refresh, and multiple low-power modes, it provides designers with timing flexibility and power management options that are directly supported by the datasheet specifications.

This device is suited for system-level memory integration where a 1.074 Gbit LPDDR2 component with JEDEC qualification, HSUL_12 interface options, and commercial temperature capability is required. ESMT’s documented features and package options make the M54D1G3232A a practical choice for designers seeking standardized LPDDR2 memory building blocks.

Request a quote or submit an RFQ to learn about availability, ordering variants (including the 1.8V / 1.2V option), and pricing for the M54D1G3232A LPDDR2 SDRAM.