M53D64164A-5BG2C

The M53D64164A-5BG2C from ESMT is a mobile LPDDR SDRAM organized as 1M × 16 (listed MemorySize: 67.11 Mbit) designed for compact, power-conscious memory applications. It implements a pipelined double-data-rate architecture with bi-directional data strobe (DQS) and differential clock inputs to support two data accesses per clock cycle at up to 200 MHz.

Targeted for commercial-temperature systems, this JEDEC-qualified, RoHS-compliant device supports power-saving modes and compact BGA mounting, making it suitable for mobile and embedded platforms that require parallel memory interface integration within a 60-ball UFBGA package.

Key Features

• Core Architecture Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle; supports CAS latency 2 and 3.
• Memory Organization 1M × 16 organization with a listed MemorySize of 67.11 Mbit and four-bank operation to support burst access patterns.
• Performance Specified for 200 MHz clock frequency with data transfer on both clock edges; typical access time listed as 5 ns and write cycle time (word/page) of 15 ns.
• Low-Voltage Operation & Power Modes VDD/VDDQ operating range 1.7 V to 1.95 V and support for Deep Power Down (DPD), auto and self refresh for reduced standby power.
• Data Interface Bi-directional DQS (edge-aligned for READ, center-aligned for WRITE), data mask (DM) for write masking, and LVCMOS-compatible inputs.
• Clocking & Synchronization Differential clock inputs (CLK/CLK) with no DLL; CLK to DQS is not synchronized, providing the device’s defined timing behavior.
• Package & Mounting 60-ball UFBGA (8 mm × 13 mm × 1 mm body, 0.8 mm ball pitch) surface-mount package suitable for space-constrained PCB designs.
• Reliability & Compliance JEDEC qualification and RoHS compliance; commercial-grade operating ambient temperature range 0 °C to +70 °C.

Typical Applications

• Mobile devices — Mobile DDR SDRAM organization and low-voltage operation make the device appropriate for handheld and battery-powered platforms requiring compact memory.
• Embedded systems — Four-bank operation and small BGA package support embedded boards where board space and predictable timing are important.
• Consumer electronics — Supports burst lengths (2, 4, 8) and CAS latency options useful for consumer devices that require parallel memory buffering.

Unique Advantages

• Double-data-rate transfers: Two data accesses per clock cycle increase effective bandwidth while operating at a 200 MHz clock.
• Flexible timing options: CAS latency 2 and 3 plus selectable burst lengths (2, 4, 8) allow tuning for different system latencies and throughput needs.
• Power management features: Deep Power Down plus auto/self refresh help reduce standby current within the specified 1.7 V–1.95 V supply window.
• Compact BGA footprint: 60-ball UFBGA (8×13 mm) enables high-density board layouts and surface-mount assembly.
• JEDEC and RoHS compliance: Industry-standard qualification and environmental compliance simplify design validation and sourcing.

Why Choose M53D64164A-5BG2C?

The M53D64164A-5BG2C combines LPDDR double-data-rate operation, low-voltage supply compatibility, and power-saving modes in a compact 60-ball UFBGA package, providing a practical memory option for commercial mobile and embedded designs. Its JEDEC qualification, DQS-based data strobes, and configurable burst/timing parameters make it suitable for applications that require predictable DRAM timing and compact integration.

This part is well suited to engineers specifying memory for space-constrained, power-sensitive systems where a parallel LPDDR SDRAM organized as 1M × 16 and rated for 0 °C to 70 °C is required. The device’s documented timing and package details support reliable implementation in production designs.

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