M54D1G1664A (2G)
| Part Description |
LPDDR2 SDRAM 1.8V/ 1.2V |
|---|---|
| Quantity | 1,394 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 134 BGA | Memory Format | DRAM | Technology | LPDDR2 SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 5.5 ns | Grade | Commercial | ||
| Clock Frequency | 533 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | -25°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 134 BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 64M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.32 |
Overview of M54D1G1664A (2G) – LPDDR2 SDRAM 1.8V/ 1.2V
The M54D1G1664A (2G) is an LPDDR2 SDRAM device from ESMT implementing a 4n prefetch architecture and a 64M × 16 memory organization for a total density of 1.074 Gbit. It supports HSUL_12 (High Speed Unterminated Logic 1.2V) signaling and JEDEC LPDDR2-S4B compliance to provide a low-voltage, double data rate DRAM option for designs that require defined LPDDR2 behavior and programmable timing.
Key electrical and timing characteristics include a maximum clock frequency of 533 MHz (data rate 1,066 Mb/s per pin for the 1.8V/1.2V variant), programmable read/write latencies and burst lengths, and multiple low-power and refresh modes to match varying system power profiles.
Key Features
- Core & architecture — 4n prefetch architecture with multiplexed, double data rate command/address inputs and commands entered on every CK edge.
- Memory organization & density — 1.074 Gbit capacity organized as 64M × 16, arranged internally as 8M × 16 bits × 8 banks.
- Performance — Rated up to 533 MHz clock frequency; ordering information lists a 1066 Mb/s per-pin data rate for the 1.8V/1.2V variant.
- Programmable timing — Programmable read latency (RL), write latency (WL) and programmable burst lengths (BL = 4, 8, 16) to adapt to system timing requirements.
- Power supply — Specified device supply ranges from the datasheet: VDD1 = 1.7–1.95 V and VDD2 / VDDCA / VDDQ = 1.14–1.3 V; product variant is listed as 1.8 V / 1.2 V.
- Low-power modes & refresh — Supports Pre-bank Refresh, Partial Array Self Refresh (PASR), Temperature Compensated Self Refresh (TCSR) via a built-in temperature sensor, and Deep Power Down (DPD) mode.
- Interface — HSUL_12 interface for high-speed unterminated 1.2V signaling and bidirectional/differential data strobe per byte (DQS_t/DQS_c).
- Signal & driver control — Programmable Driver Strength (DS), clock stop capability and comprehensive AC/DC operating and timing specifications in the device datasheet.
- Package & mounting — 134-ball BGA surface-mount package (134 BGA).
- Operating range & compliance — Commercial-grade operation from -25°C to +85°C and JEDEC LPDDR2-S4B compliance; RoHS compliant.
Unique Advantages
- JEDEC LPDDR2 compliance: Ensures predictable LPDDR2 behavior consistent with the LPDDR2-S4B specification referenced in the datasheet.
- High-speed HSUL_12 interface: Supports HSUL_12 signaling and differential DQS per byte for high-rate unterminated 1.2V operation as documented in the device specification.
- Flexible power rails: Defined VDD1 and VDD2/VDDCA/VDDQ ranges (1.7–1.95 V and 1.14–1.3 V) with an offered 1.8 V / 1.2 V variant to match platform power architectures.
- Comprehensive low-power features: PASR, TCSR with on-chip temperature sensing and Deep Power Down provide multiple options to reduce standby power and manage refresh behavior.
- Programmable timing and bursts: RL/WL programmability and selectable burst lengths (4, 8, 16) allow tuning for diverse memory controller timing strategies.
- Compact BGA footprint: 134-ball BGA surface-mount package supports high-density board designs while providing the interface and power pins needed for LPDDR2 operation.
Why Choose M54D1G1664A (2G)?
The M54D1G1664A (2G) positions itself as a standards-based LPDDR2 SDRAM option that combines JEDEC compliance, HSUL_12 signaling, and a flexible set of timing and low-power features. Its documented supply ranges, programmable latencies and burst options make it suitable for designs that need verifiable LPDDR2 behavior and configurable performance/power trade-offs.
This device is appropriate for system designs requiring a 1.074 Gbit LPDDR2 memory in a 134-ball BGA surface-mount package, with defined operating temperature limits and RoHS compliance to support commercial-grade deployments. The included refresh, self-refresh and deep power-down modes provide practical options for managing standby power and memory retention as specified in the datasheet.
Request a quote or submit a product inquiry to evaluate M54D1G1664A (2G) for your next design and receive pricing and availability details tailored to your requirements.
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