M54D1G1664A

The M54D1G1664A from ESMT is an LPDDR2 SDRAM device offering 1.074 Gbit of volatile DRAM memory organized as 64M × 16 with 8 internal banks and a 4n prefetch architecture. It implements JEDEC LPDDR2-S4B features and an HSUL_12 interface for low-voltage operation.

Designed with programmable read/write latency and burst-length flexibility plus multiple low-power modes, the device addresses applications that require low-voltage, high-data-rate parallel DRAM with a compact 134-ball BGA footprint and commercial temperature range.

Key Features

• Memory Core & Architecture – 1.074 Gbit density organized as 64M × 16 with 8 banks and 4n prefetch architecture for DDR-style transfers.
• Performance – Rated to 533 MHz (ordering table shows 1066 Mb/s per pin data rate) with documented access time of 5.5 ns and a write cycle time (word page) of 15 ns.
• Programmable Timing – Supports programmable read latency (RL) and write latency (WL), and selectable burst lengths of 4, 8, or 16.
• Low‑Voltage Power Rails – Power supply ranges listed in the datasheet: VDD1 = 1.7 to 1.95 V and VDD2 / VDDCA / VDDQ = 1.14 to 1.3 V; ordering information lists the 1.8 V / 1.2 V variant.
• Low‑Power Modes – Includes Deep Power Down (DPD), Partial Array Self Refresh (PASR), and Temperature Compensated Self Refresh (TCSR) driven by a built-in temperature sensor.
• Interface & Signalling – HSUL_12 interface with differential clock inputs (CK_t/CK_c) and bidirectional/differential data strobe per byte (DQS_t/DQS_c); multiplexed double-data-rate command/address inputs.
• Refresh & Concurrency – Pre-bank refresh capability and programmable driver strength; supports clock stop behavior for power management.
• Package & Mounting – 134-ball BGA surface-mount package (10 mm × 11.5 mm × 1.0 mm body, 0.65 mm ball pitch) for compact board integration.
• Qualification & Environmental – JEDEC LPDDR2-S4B compliance and commercial grade with RoHS compliance; operating temperature range −25 °C to 85 °C.

Unique Advantages

• Low‑voltage operation: Device power rails and HSUL_12 interface enable lower supply voltages (VDD1 and VDD2 ranges) to reduce system power consumption.
• Configurable performance: Programmable RL/WL and selectable burst lengths let designers tune latency and throughput to match system requirements.
• Comprehensive low-power features: PASR, TCSR and Deep Power Down modes provide multiple options to minimize standby and active power use.
• JEDEC compliance: LPDDR2-S4B conformity supports predictable integration with systems that require standard LPDDR2 signaling and timing.
• Compact BGA footprint: 134-ball BGA package simplifies placement in space-constrained designs while supporting parallel interface routing.
• Documented performance: Specified clock frequency, data rate, access time and cycle timings provide the metrics engineers need for system timing and validation.

Why Choose M54D1G1664A?

The M54D1G1664A delivers a documented LPDDR2 memory building block with explicit timing, low-voltage power rails, and multiple power-management modes. Its combination of programmable latency, selectable burst lengths, and JEDEC LPDDR2-S4B compliance makes it a suitable choice for systems that require standardized LPDDR2 performance and power control in a compact BGA package.

With commercial-grade operating range, RoHS compliance, and detailed datasheet-specified signaling and timing, the M54D1G1664A is positioned for designs that need verifiable LPDDR2 behavior, efficient power management, and compact board-level integration.

Request a quote or submit an inquiry to check availability, pricing, and lead time for the M54D1G1664A LPDDR2 SDRAM.