M53D64164A-4.5BG2C

The M53D64164A-4.5BG2C from ESMT is a Mobile DDR SDRAM organized as 1M × 16 (four internal banks) and specified for 220 MHz operation at a nominal 1.8 V supply. It implements a pipelined double-data-rate architecture with bi-directional data strobe (DQS) and JEDEC-standard signaling to support mobile and low-voltage system memory requirements.

Designed for compact surface-mount integration, this 60-ball UFBGA device targets mobile and portable systems that require parallel DRAM with defined timing modes, low-voltage operation (1.7 V–1.95 V), and commercial-grade temperature range (0 °C to 70 °C).

Key Features

• Core / Memory Architecture 1M × 16 organization with four internal banks; internal pipelined DDR architecture providing two data accesses per clock cycle.
• Performance Supports up to 220 MHz clock frequency with CAS latency options of 2 and 3, and burst lengths of 2, 4, and 8 for flexible data transfer patterns.
• Data Timing and Interface Bi-directional data strobe (DQS) with edge alignment for READ and center alignment for WRITE; differential clock inputs (CLK/CLK) and LVCMOS-compatible control inputs.
• Power and Low-Power Modes Operates from VDD/VDDQ = 1.7 V to 1.95 V and supports Deep Power Down (DPD) mode, auto and self refresh for retention and power management.
• System Reliability and Refresh JEDEC-standard refresh behavior with a 15.6 µs refresh interval (64 ms refresh period, 4K cycles) and standard control signals (RAS/CAS/WE/CS/CKE).
• Package and Mounting 60‑ball UFBGA (60‑BGA, 8 mm × 13 mm body, 1.0 mm thickness, 0.8 mm ball pitch) for surface-mount assembly; Pb‑free / RoHS compliant.
• Operating Conditions Commercial-grade qualification with an ambient operating temperature range of 0 °C to 70 °C and absolute supply limits shown in the device specification.

Typical Applications

• Mobile and Handheld Devices Mobile DDR SDRAM suited for low-voltage memory subsystems in compact mobile and handheld products requiring DDR transfers and small package footprint.
• Portable Electronics Provides parallel volatile storage for portable consumer and industrial electronics that target 1.8 V memory rails and JEDEC-standard interfaces.
• Embedded Memory Subsystems Use in embedded designs that need 1M × 16 DRAM banks with DDR operation, selectable burst lengths, and standard control signaling for system memory buffering.

Unique Advantages

• Low‑voltage operation: Specified VDD/VDDQ range of 1.7 V–1.95 V (nominal 1.8 V) enables integration into low-power system rails.
• DDR data throughput: Internal pipelined double-data-rate architecture with two data accesses per clock cycle and up to 220 MHz clock supports increased effective data bandwidth versus single-rate DRAM.
• Flexible timing and bursts: CAS latency 2/3, selectable burst lengths (2/4/8) and burst types (sequential/interleave) allow tuning for application-specific access patterns.
• Compact BGA package: 60-ball UFBGA (8 × 13 mm) offers a small PCB footprint for space-constrained designs while supporting surface-mount assembly.
• Standardized interoperability: JEDEC-standard implementation and LVCMOS-compatible inputs simplify integration with standard memory controllers and system designs.
• Environmental compliance: RoHS compliant and Pb‑free ordering option as noted in the device ordering information.

Why Choose M53D64164A-4.5BG2C?

The M53D64164A-4.5BG2C is positioned for designs that require a compact, JEDEC-standard Mobile DDR SDRAM device with DDR transfers, low-voltage operation, and selectable timing/burst options. Its 1M × 16 organization, four-bank architecture, and up to 220 MHz clocking provide a clear, verifiable footprint for embedded memory subsystems in mobile and portable applications.

With RoHS compliance, a Pb‑free package option, and commercial-grade operating range (0 °C to 70 °C), this device is suited for production systems that demand standardized signaling, compact packaging, and low-voltage compatibility backed by documented device specifications.

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