M53D5123216A-7.5BG

The M53D5123216A-7.5BG is a Mobile LPDDR SDRAM offering a 512 Mbit density with a 4M×32 organization. It implements an internal pipelined double‑data‑rate architecture with four bank operation and a differential clock input, making it suitable for mobile memory subsystems and low‑voltage designs that require DDR throughput at a 133 MHz device rating.

Built to JEDEC standards and packaged in a compact 144‑ball FBGA (12×12), this part delivers DDR read/write timing features and multiple low‑power modes to support power‑sensitive applications.

Key Features

• Core & Architecture Internal pipelined double‑data‑rate architecture providing two data accesses per clock cycle; four internal banks and support for CAS latency 2 and 3.
• Memory Organization & Capacity 512 Mbit density with 4M × 32 organization and parallel memory interface for standard LPDDR memory mapping.
• Performance & Timing Rated for 133 MHz operation; access time listed as 6 ns and write cycle time (word page) at 15 ns. Burst length options include 2, 4, 8 and 16 with sequential and interleave burst types.
• Low‑Power & Refresh VDD/VDDQ operating range 1.7 V to 1.95 V; supports Deep Power Down (DPD), Auto & Self Refresh, PASR (Partial Array Self Refresh) and internal TCSR (Temperature Compensated Self Refresh).
• Interface & I/O Bi‑directional data strobe (DQS) with DQS alignment behavior: edge‑aligned for READ and center‑aligned for WRITE. Includes data mask (DM) for write masking and differential clock inputs (CLK and CLK̅).
• Package & Environmental 144‑ball UFBGA / FCBGA (12×12) surface‑mount package; commercial grade operating range 0 °C to 70 °C. RoHS compliant.
• Standards & Signals JEDEC standard LPDDR feature set with support for RAS, CAS, WE, CS, CKE and bank/address inputs for standard DRAM control.

Typical Applications

• Mobile memory subsystems — Designed as an LPDDR device for compact memory implementations where low voltage and DDR throughput are required.
• Battery‑sensitive designs — Low operating voltage (1.7 V–1.95 V) plus Deep Power Down and self‑refresh features help reduce standby power.
• Embedded and handheld systems — Compact 144‑ball FBGA package and JEDEC compatibility support dense board layouts and standard memory controller interfaces.

Unique Advantages

• Low‑voltage operation: 1.7 V–1.95 V supply range lowers overall power consumption for portable designs.
• DDR throughput: Pipelined DDR architecture with two data accesses per clock cycle increases effective data bandwidth without additional external complexity.
• Flexible burst and timing options: CAS latency 2/3 and burst lengths of 2, 4, 8, 16 enable tuning for diverse access patterns and system performance targets.
• Power management features: Deep Power Down, PASR and internal TCSR provide multiple mechanisms to reduce active and standby power.
• Compact footprint: 144‑ball FBGA (12×12) supports high‑density board integration while keeping a standard surface‑mount assembly process.
• JEDEC compliance: Adherence to JEDEC LPDDR standards simplifies integration with compliant memory controllers and system designs.

Why Choose M53D5123216A-7.5BG?

The M53D5123216A-7.5BG combines a JEDEC‑standard LPDDR architecture with low‑voltage operation, multiple low‑power modes and a compact 144‑ball FBGA package to address mobile and embedded memory needs. Its pipelined DDR operation, selectable CAS latencies and flexible burst options let system designers balance latency, throughput and power for targeted use cases.

This device is appropriate for designs that require industry‑standard LPDDR signaling, DDR read/write timing behavior and a commercial temperature rating. Its feature set supports power‑sensitive applications where compact footprint and JEDEC interoperability matter.

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