M53D5121632A-6BG

The M53D5121632A-6BG is a Mobile LPDDR SDRAM device from ESMT featuring an 8M × 16 memory organization and JEDEC-standard mobile DDR architecture. It implements an internal pipelined double-data-rate design with bi-directional data strobe (DQS) and differential clock inputs to support high-throughput parallel memory interfaces.

Designed for compact commercial applications, this device operates at a system clock rate of 166 MHz with VDD/VDDQ supply range of 1.7 V to 1.95 V and is offered in a space-saving 60-ball UFBGA package (8 mm × 9 mm × 1.0 mm body, 0.8 mm ball pitch).

Key Features

• Core Architecture Internal pipelined double‑data‑rate architecture providing two data accesses per clock cycle; differential CLK/CLK̄ inputs and bi-directional DQS for read/write timing.
• Memory Organization & Capacity 8M × 16 organization (device listing includes a memory size of 536.9 Mbit) with four internal banks and support for CAS latency 2 and 3.
• Burst and Access Modes Burst types: Sequential and Interleave; burst lengths supported: 2, 4, 8, 16; DQS edge-aligned for READ and center-aligned for WRITE.
• Power and Refresh VDD/VDDQ = 1.7 V to 1.95 V; supports Auto & Self Refresh, PASR (Partial Array Self Refresh), TCSR (Temperature Compensated Self Refresh) and Deep Power Down (DPD) mode; 7.8 μs refresh interval (64 ms refresh period, 8K cycle).
• Timing and Performance System clock frequency: 166 MHz; access time: 5.5 ns; write cycle time (word page): 15 ns; supports CAS latency settings and high-speed burst transfers.
• Package & Thermal 60‑UFBGA (60‑ball BGA, 8×13 ball map) with 0.8 mm ball pitch and 8 mm × 9 mm × 1.0 mm body; operating ambient temperature 0 °C to 70 °C; commercial grade and JEDEC qualification.
• Signal & I/O LVCMOS‑compatible inputs, data mask (DM) for write masking, and separate VDDQ supply for DQ I/O.

Typical Applications

• Mobile and handheld devices — Memory for compact mobile DDR implementations that require DDR throughput in a small‑footprint BGA package.
• Portable consumer electronics — Local DRAM for feature‑rich portable products where low voltage operation and burst transfers are needed.
• Commercial embedded systems — Space‑constrained embedded designs operating in commercial temperature ranges that require JEDEC‑compliant LPDDR memory.

Unique Advantages

• DDR throughput in a compact package — 166 MHz system clock with DDR architecture delivers two data transfers per clock in a 60‑ball UFBGA footprint.
• Low‑voltage operation — VDD/VDDQ range of 1.7 V to 1.95 V reduces power consumption compared with higher‑voltage DRAM options.
• Flexible timing and burst support — CAS latency 2/3 plus burst lengths 2/4/8/16 allow designers to tune latency and transfer size for target workloads.
• Advanced power management — PASR, TCSR and Deep Power Down modes help minimize standby power and adapt refresh behavior to system needs.
• JEDEC‑standard compatibility — Conforms to JEDEC mobile DDR specifications for predictable integration and interoperability.
• Board‑space efficient BGA — 60‑ball (8×13) BGA with 0.8 mm pitch and a small package body supports dense board layouts.

Why Choose M53D5121632A-6BG?

The M53D5121632A-6BG positions itself as a practical LPDDR memory option for commercial mobile and compact embedded designs that require DDR data rates, low‑voltage operation, and advanced power management features. Its JEDEC‑aligned architecture, flexible timing options and four‑bank operation make it suitable for designs that balance performance with board‑space constraints.

With commercial temperature range and a 60‑ball UFBGA package, this device fits applications where compactness, JEDEC compatibility and low‑voltage DDR behavior are key integration considerations.

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