M53D256328A-6BG2F

The M53D256328A-6BG2F is a 256 Mbit mobile LPDDR SDRAM organized as 2M × 32 with a parallel memory interface. It implements an internal pipelined double-data-rate architecture delivering two data accesses per clock cycle and is offered in a compact 144-ball FBGA package.

Designed for mobile and compact memory applications, this device operates across a 1.7 V to 1.95 V supply range (nominal 1.8 V) and supports up to 166 MHz system clock operation, providing a balance of low-voltage operation and DDR throughput for space-constrained designs.

Key Features

• Core / Memory Architecture — Internal pipelined DDR architecture with two data accesses per clock cycle; four-bank operation and CAS latency = 3.
• Data Transfer and Timing — Bi-directional data strobe (DQS) with edge-aligned read and center-aligned write; burst lengths of 2, 4, 8 and 16; write cycle time (word/page) 15 ns and access time 5.5 ns.
• Clock and Interface — Differential clock inputs (CLK and CLK¯) and LVCMOS‑compatible inputs; parallel memory interface supporting standard DDR signaling conventions.
• Power — Low-voltage operation: VDD/VDDQ = 1.7 V to 1.95 V (nominal 1.8 V).
• Refresh and Low-Power Support — Auto and self-refresh with 15.6 µs refresh interval (64 ms refresh period, 4K cycle); supports PASR (Partial Array Self Refresh) and internal TCSR (Temperature Compensated Self Refresh).
• Write Mask and Drive — Data mask (DM) for write masking and drive strength (DS) control.
• Package and Mounting — 144-ball FBGA (12 mm × 12 mm body, 0.8 mm ball pitch, 1.4 mm body) for surface mount applications.
• Qualification & Environmental — JEDEC standard mobile DDR SDRAM; RoHS compliant.
• Operating Range — Commercial grade with operating temperature 0 °C to 70 °C.

Typical Applications

• Mobile devices — Mobile DDR SDRAM organized for compact memory banks and DDR transfers in portable device memory subsystems.
• Handheld and portable systems — Low-voltage 1.7 V–1.95 V operation and FBGA packaging support space-efficient, low-power memory integration.
• Embedded memory subsystems — Four-bank DDR operation, burst modes and refresh features for embedded memory buffering and transient data storage.

Unique Advantages

• DDR throughput at 166 MHz — Double-data-rate architecture enables two data accesses per clock cycle for higher effective data rates at the specified clock frequency.
• Low-voltage operation — 1.7 V to 1.95 V supply range reduces power envelope compared with higher-voltage memories while matching common 1.8 V system rails.
• Flexible burst and latency control — Support for multiple burst lengths and CAS latency = 3 provides design flexibility for access pattern optimization.
• Compact FBGA package — 144-ball FBGA (12×12 mm) footprint supports high-density PCB layouts and surface-mount assembly.
• Self-refresh and temperature compensation — PASR and internal TCSR help maintain data integrity during low-power and varying-temperature conditions.
• Standards-based implementation — JEDEC-compliant mobile DDR SDRAM feature set and LVCMOS-compatible inputs simplify system integration.

Why Choose M53D256328A-6BG2F?

The M53D256328A-6BG2F delivers a 256 Mbit LPDDR solution with DDR internal architecture, low-voltage operation and industry-standard feature set that suits compact, mobile and embedded memory applications. Its combination of 2M×32 organization, four-bank operation, flexible burst modes and self-refresh capabilities provides practical performance and power characteristics for designs requiring standard mobile DDR memory.

Offered in a compact 144-ball FBGA and manufactured to JEDEC specifications by ESMT, this part is appropriate for projects prioritizing a small footprint, DDR data rates at 166 MHz, and robust refresh/low-power features within commercial temperature ranges.

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