M53D2561616A-5BG2F

The M53D2561616A-5BG2F is a Mobile DDR (LPDDR) SDRAM device from ESMT offering a 256Mbit density organized as 4M×16. It implements an internal pipelined double-data-rate architecture with bi-directional data strobe (DQS) and differential clock inputs for low-voltage mobile memory applications.

Designed for compact systems requiring low-voltage DDR memory, this part provides a 200 MHz maximum clock, wide 1.7 V–1.95 V supply range, JEDEC-standard operation, and a 60-ball UFBGA package for surface-mount integration.

Key Features

• Core Architecture Internal pipelined double-data-rate (DDR) architecture enabling two data accesses per clock cycle; CAS latency of 3 and selectable burst length (2, 4, 8, 16).
• Memory Organization & Density 256Mbit density organized as 4M×16; product data lists MemorySize as 268.4 Mbit and device supports four-bank operation.
• Timing & Performance Maximum clock frequency 200 MHz with access time listed at 5 ns and write cycle time (word/page) of 15 ns.
• Data I/O & Control Bi-directional DQS (LDQS/UDQS) for read/write timing alignment; data mask (DM) inputs for write masking; all inputs (except data & DM) sampled at the rising edge of CLK.
• Power & Refresh Low-voltage operation with VDD/VDDQ = 1.7 V–1.95 V and auto/self-refresh support including PASR and internal temperature-compensated self refresh (TCSR); 7.8 μs refresh interval (8K cycles / 64 ms period).
• Interface & Signaling Differential clock inputs (CLK/CLK̄), LVCMOS-compatible inputs, and drive-strength (DS) control; no DLL (CLK to DQS is not synchronized).
• Package & Mounting 60-ball UFBGA (60-BGA, 8 mm × 13 mm, 1.2 mm body, 0.8 mm pitch) surface-mount package for compact board-level integration.
• Qualification & Grade JEDEC standard device, commercial grade with operating ambient temperature 0 °C to 70 °C and RoHS compliance.

Typical Applications

• Mobile devices — Mobile DDR SDRAM architecture is targeted for compact, low-voltage memory requirements in handheld and portable devices.
• Compact consumer electronics — Small-footprint BGA package and low-voltage operation support space-constrained consumer designs.
• Portable networking and multimedia modules — Double-data-rate operation and burst modes facilitate sustained data transfers in modules requiring efficient memory bursts.

Unique Advantages

• Low-voltage operation: 1.7 V–1.95 V VDD/VDDQ range reduces power draw compared with higher-voltage alternatives, benefiting battery-operated products.
• Double-data-rate throughput: Internal DDR architecture and 200 MHz operation deliver two data accesses per clock cycle for efficient data movement.
• Flexible burst and timing options: CAS latency 3 plus selectable burst lengths (2/4/8/16) enable designers to tune performance versus bandwidth use.
• Compact surface-mount package: 60-ball UFBGA footprint supports high-density board layouts where space is constrained.
• Robust refresh and low-power modes: PASR and temperature-compensated self-refresh help manage retention and power in standby scenarios.
• Standards-based interoperability: JEDEC-standard mobile DDR implementation eases integration into JEDEC-compliant designs.

Why Choose M53D2561616A-5BG2F?

The M53D2561616A-5BG2F combines a mobile DDR SDRAM architecture with low-voltage operation and a compact 60-ball BGA package to meet the needs of space- and power-constrained systems. Its DDR pipeline, bi-directional DQS, and flexible burst modes make it suitable for designs that require efficient, burst-oriented memory transfers.

This device is positioned for commercial-grade embedded and portable designs that require JEDEC-standard LPDDR behavior, predictable timing (200 MHz operation, CAS latency 3), and integrated refresh features for power-managed operation.

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