M52D5123216A-7BIG

The M52D5123216A-7BIG is a 536,870,912‑bit (536.9 Mbit) low‑power synchronous DRAM organized as 4,194,304 × 32 with four internal banks. It implements a high data‑rate SDRAM architecture with programmable latencies and burst lengths for use in high‑bandwidth, high‑performance memory system applications.

Designed for embedded and industrial environments, the device operates from a 1.8V supply (1.7–1.95V range), supports LVCMOS interfaces with multiplexed addresses, and is qualified to JEDEC standards with RoHS compliance.

Key Features

• Memory Organization — 536,870,912 bits (536.9 Mbit) arranged as 4,194,304 words × 32 bits with four banks for parallel bank operation and efficient burst transfers.
• Performance — Maximum specified clock frequency 143 MHz, access time 6 ns and write cycle time (word/page) 14 ns, with programmable CAS latency (2, 3) to tune performance.
• Burst and Transfer Modes — Supports burst lengths of 1, 2, 4, 8 and full‑page, and burst types sequential and interleave for flexible data transfer patterns.
• Interface and Control — LVCMOS compatible I/O with multiplexed address pins; all inputs sampled on the positive clock edge. Standard SDRAM control signals including CLK, CKE, CS, RAS, CAS and WE.
• Low‑Power and Refresh — Deep Power Down (DPD) mode, auto and self refresh, 64 ms refresh period (8K cycle), PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh) for optimized power/refresh management.
• Signal and Timing Features — DQM data masking, Driver Strength (DS) control, and MRS/EMRS cycles for extended device configuration.
• Power and Packaging — 1.8V nominal supply (operating range 1.7–1.95V); available in a 90‑ball BGA (8×13 mm body, 1.0 mm height, 0.8 mm ball pitch) for surface mount applications.
• Industrial Grade — Operating temperature range −40°C to 85°C and JEDEC qualification for industrial applications; RoHS compliant.

Typical Applications

• High‑bandwidth memory subsystems — For systems requiring synchronous high data‑rate DRAM with programmable latencies and multiple burst modes.
• Industrial embedded equipment — Suited to designs that demand industrial temperature operation (−40°C to 85°C) and JEDEC‑qualified memory components.
• Low‑power designs — Applicable where Deep Power Down, self‑refresh features, and a 1.8V power profile are needed to manage standby and active power.

Unique Advantages

• Flexible performance tuning — CAS latency options (2, 3) and multiple burst lengths let designers balance throughput and latency to match system requirements.
• Comprehensive low‑power modes — DPD, PASR and TCSR support reduce power consumption in standby and refresh‑optimized scenarios.
• Industrial temperature range — −40°C to 85°C rating enables deployment in a wide range of challenging environments without additional derating.
• JEDEC qualification and RoHS compliance — Ensures adherence to industry memory standards and environmental requirements.
• Compact BGA package — 90‑ball BGA (8×13 mm) provides a space‑efficient surface mount option for dense PCB designs.

Why Choose M52D5123216A-7BIG?

The M52D5123216A-7BIG brings a balance of capacity, configurability and industrial robustness: a 536.9 Mbit SDRAM organized for multi‑bank parallelism, programmable timing and burst modes, and comprehensive low‑power features. Its 1.8V operation, LVCMOS interface and JEDEC qualification make it suitable for designers who need a verified synchronous DRAM building block in industrial temperature environments.

This device is appropriate for designers of high‑performance memory subsystems and industrial embedded platforms that require verified timing control, refresh management and space‑efficient BGA packaging. The combination of configurable performance parameters and power management options delivers long‑term value through flexibility and predictable operation in demanding systems.

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