M52D5123216A-5BG

The M52D5123216A-5BG is a mobile synchronous DRAM device organized as 4 × 4,194,304 words by 32 bits (536,870,912 bits). It implements a four‑bank LPSDR SDRAM architecture with synchronous operation for precise timing and high data‑rate transfers.

Designed for high‑bandwidth, high‑performance memory system applications, this JEDEC‑qualified commercial‑grade SDRAM supports programmable latencies and burst lengths while operating from a 1.7 V to 1.95 V supply and a maximum clock frequency of 200 MHz.

Key Features

• Core & Organization 4M × 32 memory organization with four internal banks; total capacity reported as 536.9 Mbit.
• Performance Up to 200 MHz clock frequency with CAS latency options of 2 and 3 and an access time of 4.5 ns for synchronous, cycle‑accurate operation.
• Burst and Transfer Modes Programmable burst lengths (1, 2, 4, 8 and full‑page) and burst types (sequential and interleave) for flexible data transfer patterns.
• Low‑Voltage Operation 1.8 V nominal operation with specified supply range of 1.7 V to 1.95 V, supporting LVCMOS input compatibility for multiplexed address inputs.
• Low‑Power & Refresh Supports auto and self refresh, Deep Power Down (DPD) mode, PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh); 64 ms refresh period (8K cycle).
• Data Integrity & Control DQM for masking, driver strength (DS) control, and EMRS/MRS cycles for mode programming and special functions.
• Package & Mounting 90‑ball BGA package (8 mm × 13 mm × 1.0 mm body, 0.8 mm ball pitch) for surface‑mount assembly; supplier device package listed as 90‑BGA (8×13).
• Operating Range & Compliance Commercial grade with JEDEC qualification and an operating temperature range of 0 °C to 70 °C; RoHS compliant.

Typical Applications

• Mobile and Portable Devices — Mobile SDRAM architecture and low‑voltage operation make it suitable for space‑constrained mobile memory stacks.
• High‑Bandwidth Memory Subsystems — Four banks, programmable latencies and burst modes enable high throughput in memory‑centric designs.
• Embedded and Consumer Electronics — Commercial grade device for embedded boards and consumer applications requiring synchronous DRAM with flexible refresh and low‑power modes.

Unique Advantages

• Synchronous, clocked operation — All inputs sampled on the positive clock edge for deterministic timing and consistent cycle control.
• Flexible performance tuning — Selectable CAS latencies, burst lengths and burst types let designers balance latency and throughput for targeted workloads.
• Comprehensive low‑power features — Deep Power Down, PASR and temperature‑compensated self‑refresh reduce standby power and extend battery life in portable systems.
• Compact BGA package — 90‑ball BGA (8×13 mm) supports high‑density board layouts while providing reliable surface‑mount assembly.
• Standards alignment — JEDEC qualification and RoHS compliance simplify design reviews and regulatory considerations for commercial products.

Why Choose M52D5123216A-5BG?

The M52D5123216A-5BG combines a synchronous, four‑bank SDRAM architecture with low‑voltage operation and flexible timing options to address high‑bandwidth, high‑performance memory designs. Its programmable burst behavior, selectable CAS latencies and comprehensive low‑power features make it suitable for mobile, embedded and consumer applications that require deterministic timing and efficient power management.

Backed by JEDEC qualification and supplied in a compact 90‑ball BGA package, this device is targeted at engineers and procurement teams building scalable, reliable memory subsystems where measured performance, thermal range and standards compliance are key selection criteria.

Request a quote or submit an inquiry to begin your procurement or to obtain the full product datasheet and ordering information.