M52D5123216A-6BIG

The M52D5123216A-6BIG from ESMT is a 536,870,912‑bit mobile synchronous DRAM organized as 4,194,304 words × 32 bits across 4 banks. It delivers synchronous high‑data‑rate operation at up to 166 MHz with programmable burst lengths and CAS latencies for adaptable timing and throughput.

Designed for industrial operating conditions, the device supports a 1.8 V power domain (operating range 1.7 V–1.95 V), JEDEC qualification, RoHS compliance and a −40 °C to 85 °C temperature range, making it suitable for high‑bandwidth, high‑performance memory system designs.

Key Features

• Core / Architecture Mobile Synchronous DRAM organized as 4M × 32 with 4 internal banks to enable concurrent bank operation and improved command throughput.
• Performance 166 MHz maximum frequency with access time of 5 ns and programmable CAS Latency (2, 3). Write cycle time (word/page) is specified at 12 ns.
• Burst and Transfer Modes Programmable burst length (1, 2, 4, 8 & full page) and burst type (sequential and interleave) to match system transfer patterns.
• Power and Low‑Voltage Operation Nominal 1.8 V supply (operating range 1.7 V–1.95 V) with Deep Power Down (DPD) mode and auto/self refresh support to manage power in low‑activity states.
• Memory Management & Reliability Supports PASR (Partial Array Self Refresh), TCSR (Temperature Compensated Self Refresh), DQM masking, and a 64 ms refresh period (8K cycle) for reliable data retention.
• Interface and Timing LVCMOS compatible I/O with all inputs sampled on the positive edge of the system clock; supports MRS/EMRS cycles and driver strength (DS) control.
• Package & Mounting 90‑ball BGA (8 mm × 13 mm × 1.0 mm body, 0.8 mm ball pitch) for surface‑mount assembly in compact memory subsystems.
• Industrial Grade JEDEC‑qualified device rated for −40 °C to 85 °C operation and RoHS compliant.

Typical Applications

• High‑bandwidth embedded systems — Synchronous high‑data‑rate architecture and programmable burst lengths support designs requiring fast, repeated memory transfers.
• Industrial electronics — JEDEC qualification and −40 °C to 85 °C rating align with industrial temperature and reliability requirements.
• Mobile SDRAM implementations — Mobile SDRAM organization and 1.8 V operation provide a compact memory option for space‑constrained modules.

Unique Advantages

• Flexible timing options: Programmable CAS latencies and multiple burst lengths let designers tune latency and throughput to system needs.
• Banked architecture: Four internal banks increase effective parallelism for interleaved access patterns and sustained data flow.
• Industrial temperature range: Rated for −40 °C to 85 °C to support deployments in harsh or variable environments.
• Compact BGA package: 90‑ball BGA minimizes board footprint while enabling high pin count connectivity for data and power routing.
• Power management features: Deep Power Down, auto/self refresh, PASR and TCSR provide options to reduce power during idle and vary refresh behavior with temperature.
• Standards compliance: JEDEC qualification and RoHS compliance facilitate integration into certified supply chains and regulated products.

Why Choose M52D5123216A-6BIG?

The M52D5123216A-6BIG combines mobile SDRAM organization with synchronous high‑data‑rate operation to deliver configurable performance for memory subsystems that require predictable timing and throughput. Its industrial temperature rating, JEDEC qualification and power management features make it suitable for robust embedded and industrial designs where both performance and environmental tolerance matter.

This device is well suited for engineers specifying compact, low‑voltage DRAM in designs that need programmable latency and burst behavior, banked concurrency, and standard JEDEC interoperability for long‑term system scalability and reliability.

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