M52D5121632A-7BIG
| Part Description |
LPSDR SDRAM 512Mbit (8Mx16x4 Banks), 143MHz, 1.8V, 54-Ball FBGA, Industrial (-40~85C) |
|---|---|
| Quantity | 302 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 54-FBGA (8x8) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 6 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 1.7V ~ 1.95V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 14 ns | Packaging | 54-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | LVCMOS | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.28 |
Overview of M52D5121632A-7BIG – LPSDR SDRAM 512Mbit (8Mx16x4 Banks), 143MHz, 1.8V, 54-Ball FBGA, Industrial (-40~85C)
The M52D5121632A-7BIG is a Mobile Synchronous DRAM device offering 536,870,912 bits of storage organized as 4 × 8,388,608 words by 16 bits. Its synchronous design supports precise cycle control with data transactions synchronized to the system clock for predictable, high-throughput operation.
Designed for industrial temperature operation (‑40 °C to 85 °C), this 1.8V-class SDRAM (supply range 1.7 V–1.95 V) is offered in a compact 54-ball FBGA (8 mm × 8 mm × 1 mm body, 0.8 mm ball pitch) and is rated for the M52D5121632A-7BIG variant at 143 MHz. The device implements JEDEC-compatible features for flexible memory subsystem integration.
Key Features
- Core & Memory Organization 536,870,912-bit device organized as 4 × 8,388,608 words × 16 bits, providing wide data paths for system memory buffers.
- Performance Rated for 143 MHz operation (M52D5121632A-7BIG variant) with CAS latency options of 2 or 3 and programmable burst lengths (1, 2, 4, 8 and full page).
- Addressing & Banks Multiplexed row/column address bus with BA0/BA1 bank select for four-bank operation, enabling concurrent bank management and higher throughput.
- Interface LVCMOS-compatible I/O with all inputs sampled on the positive edge of the system clock for synchronous system timing.
- Power & Low-Power Modes 1.8V nominal operation (1.7–1.95 V supply range) and support for Deep Power Down (DPD) plus driver-strength (DS) settings to help manage power and I/O characteristics.
- Refresh & Reliability Auto and self-refresh support with a 64 ms refresh period (8K cycles), plus PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh) for robust data retention across conditions.
- Command & Configuration MRS/EMRS cycles for in-system configuration of extended features including burst type (Sequential & Interleave) and device options.
- Data Control DQM data mask for input/output masking and Hi-Z outputs; isolated VDDQ/VSSQ for improved output buffer noise immunity.
- Package & Temperature 54-ball FBGA (8×8 mm body, 0.8 mm pitch), surface-mount package rated for industrial operation from ‑40 °C to 85 °C.
- Standards & Compliance JEDEC-qualified device and RoHS-compliant construction.
Typical Applications
- High-bandwidth memory subsystems — Used where synchronous, clocked DRAM is required to support continuous, cycle-aligned data transfers.
- Industrial systems — Suitable for designs requiring guaranteed operation across an industrial temperature range (‑40 °C to 85 °C).
- Embedded platforms with strict timing — Fits applications needing programmable latency and burst behavior for tailored memory timing.
Unique Advantages
- Flexible timing and burst control: CAS latency options and programmable burst lengths enable tuning for diverse throughput and latency requirements.
- Industrial temperature rating: Guaranteed operation from ‑40 °C to 85 °C supports deployment in harsh environments.
- Low-voltage operation: 1.8V-class supply (1.7–1.95 V) reduces system power while maintaining synchronous DRAM performance.
- Advanced refresh modes: PASR and TCSR provide refined refresh behavior to optimize power and retention across temperature ranges.
- Compact FBGA package: 54-ball FBGA (8 mm × 8 mm, 0.8 mm pitch) enables dense board-level integration in space-constrained designs.
- JEDEC and RoHS compliance: Industry-standard qualification and environmental compliance simplify integration into regulated product lines.
Why Choose M52D5121632A-7BIG?
The M52D5121632A-7BIG combines synchronous DRAM architecture, flexible timing controls and industrial temperature operation to deliver a robust memory option for high-bandwidth, timing-sensitive systems. Its 4-bank organization, programmable latencies and burst modes make it adaptable to a range of memory subsystem designs.
This 1.8V-class, JEDEC-qualified FBGA device is well suited for engineers specifying reliable, synchronous memory in industrial and embedded applications that require compact packaging and predictable, clock-synchronous operation.
Request a quote or submit a request for pricing and availability for the M52D5121632A-7BIG to evaluate it for your next design.
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