M52D5121632A-7BIG

512Mb SDRAM Ind.
Part Description

LPSDR SDRAM 512Mbit (8Mx16x4 Banks), 143MHz, 1.8V, 54-Ball FBGA, Industrial (-40~85C)

Quantity 302 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-FBGA (8x8)Memory FormatDRAMTechnologyDRAM
Memory Size512 MbitAccess Time6 nsGradeIndustrial
Clock Frequency143 MHzVoltage1.7V ~ 1.95VMemory TypeVolatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page14 nsPackaging54-FBGA
Mounting MethodSurface MountMemory InterfaceLVCMOSMemory Organization8M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.28

Overview of M52D5121632A-7BIG – LPSDR SDRAM 512Mbit (8Mx16x4 Banks), 143MHz, 1.8V, 54-Ball FBGA, Industrial (-40~85C)

The M52D5121632A-7BIG is a Mobile Synchronous DRAM device offering 536,870,912 bits of storage organized as 4 × 8,388,608 words by 16 bits. Its synchronous design supports precise cycle control with data transactions synchronized to the system clock for predictable, high-throughput operation.

Designed for industrial temperature operation (‑40 °C to 85 °C), this 1.8V-class SDRAM (supply range 1.7 V–1.95 V) is offered in a compact 54-ball FBGA (8 mm × 8 mm × 1 mm body, 0.8 mm ball pitch) and is rated for the M52D5121632A-7BIG variant at 143 MHz. The device implements JEDEC-compatible features for flexible memory subsystem integration.

Key Features

  • Core & Memory Organization 536,870,912-bit device organized as 4 × 8,388,608 words × 16 bits, providing wide data paths for system memory buffers.
  • Performance Rated for 143 MHz operation (M52D5121632A-7BIG variant) with CAS latency options of 2 or 3 and programmable burst lengths (1, 2, 4, 8 and full page).
  • Addressing & Banks Multiplexed row/column address bus with BA0/BA1 bank select for four-bank operation, enabling concurrent bank management and higher throughput.
  • Interface LVCMOS-compatible I/O with all inputs sampled on the positive edge of the system clock for synchronous system timing.
  • Power & Low-Power Modes 1.8V nominal operation (1.7–1.95 V supply range) and support for Deep Power Down (DPD) plus driver-strength (DS) settings to help manage power and I/O characteristics.
  • Refresh & Reliability Auto and self-refresh support with a 64 ms refresh period (8K cycles), plus PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh) for robust data retention across conditions.
  • Command & Configuration MRS/EMRS cycles for in-system configuration of extended features including burst type (Sequential & Interleave) and device options.
  • Data Control DQM data mask for input/output masking and Hi-Z outputs; isolated VDDQ/VSSQ for improved output buffer noise immunity.
  • Package & Temperature 54-ball FBGA (8×8 mm body, 0.8 mm pitch), surface-mount package rated for industrial operation from ‑40 °C to 85 °C.
  • Standards & Compliance JEDEC-qualified device and RoHS-compliant construction.

Typical Applications

  • High-bandwidth memory subsystems — Used where synchronous, clocked DRAM is required to support continuous, cycle-aligned data transfers.
  • Industrial systems — Suitable for designs requiring guaranteed operation across an industrial temperature range (‑40 °C to 85 °C).
  • Embedded platforms with strict timing — Fits applications needing programmable latency and burst behavior for tailored memory timing.

Unique Advantages

  • Flexible timing and burst control: CAS latency options and programmable burst lengths enable tuning for diverse throughput and latency requirements.
  • Industrial temperature rating: Guaranteed operation from ‑40 °C to 85 °C supports deployment in harsh environments.
  • Low-voltage operation: 1.8V-class supply (1.7–1.95 V) reduces system power while maintaining synchronous DRAM performance.
  • Advanced refresh modes: PASR and TCSR provide refined refresh behavior to optimize power and retention across temperature ranges.
  • Compact FBGA package: 54-ball FBGA (8 mm × 8 mm, 0.8 mm pitch) enables dense board-level integration in space-constrained designs.
  • JEDEC and RoHS compliance: Industry-standard qualification and environmental compliance simplify integration into regulated product lines.

Why Choose M52D5121632A-7BIG?

The M52D5121632A-7BIG combines synchronous DRAM architecture, flexible timing controls and industrial temperature operation to deliver a robust memory option for high-bandwidth, timing-sensitive systems. Its 4-bank organization, programmable latencies and burst modes make it adaptable to a range of memory subsystem designs.

This 1.8V-class, JEDEC-qualified FBGA device is well suited for engineers specifying reliable, synchronous memory in industrial and embedded applications that require compact packaging and predictable, clock-synchronous operation.

Request a quote or submit a request for pricing and availability for the M52D5121632A-7BIG to evaluate it for your next design.

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