M52D5121632A-6BG

The M52D5121632A-6BG from ESMT is a mobile synchronous DRAM device organized as 8M × 16 with four banks, delivering 536.9 Mbit of volatile memory in a compact 54‑ball FBGA package. Designed for high‑data‑rate, synchronous memory systems, it provides programmable latencies and burst lengths to match a range of timing and throughput requirements.

Targeted at commercial applications, this device operates from a 1.7 V to 1.95 V supply and supports a maximum clock frequency of 166 MHz, making it suitable for mobile and high‑bandwidth memory system designs that require JEDEC‑qualified SDRAM.

Key Features

• Memory Architecture 536.9 Mbit capacity organized as 8M × 16 with four banks for concurrent bank operation and efficient data access.
• Synchronous Operation & Timing Supports system clock sampling on the positive clock edge, with CAS latency options of 2 and 3, 5 ns access time and a 12 ns write cycle time (word/page).
• Burst and Access Flexibility Programmable burst length (1, 2, 4, 8 & full page) and burst type (sequential and interleave) to match system transfer patterns.
• Power and Low‑Power Modes 1.7 V–1.95 V supply range with Deep Power Down (DPD), auto and self refresh, PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh) to manage power and retention.
• Signal & I/O LVCMOS compatible interface with DQM masking support and isolated data output supply pins (VDDQ/VSSQ) for improved output buffer noise immunity.
• Command and Configuration MRS/EMRS programming cycles, driver strength (DS) control and support for standard SDRAM control signals including CLK, CS, CKE, RAS, CAS, WE and address/bank pins.
• Refresh and Reliability Auto and self refresh support with a 64 ms refresh period (8K cycle) per datasheet specification.
• Package & Mounting 54‑ball FBGA (8 mm × 8 mm × 1 mm body, 0.8 mm ball pitch), surface mount package suitable for compact board layouts.
• Operational Grade Commercial grade with JEDEC qualification and an operating temperature range of 0 °C to 70 °C; RoHS compliant.

Typical Applications

• Mobile devices — Mobile synchronous DRAM architecture and low‑voltage operation support memory subsystems in portable and battery‑sensitive equipment.
• High‑bandwidth memory systems — Programmable burst lengths and CAS latency options make the device suitable for systems requiring predictable, high‑rate transfers.
• Consumer electronics — Compact 54‑ball FBGA package and JEDEC qualification fit compact designs where standardized SDRAM is required.

Unique Advantages

• Flexible timing configuration — CAS latency (2, 3) and multiple burst length options allow designers to tune performance to system timing and throughput needs.
• Comprehensive low‑power features — PASR, TCSR, Deep Power Down, and auto/self refresh reduce active and standby power for energy‑sensitive designs.
• Isolated data I/O supply — VDDQ/VSSQ isolation for output buffers improves noise immunity and signal integrity on the data bus.
• JEDEC qualification and RoHS compliance — Conforms to industry memory standards and environmental requirements for commercial applications.
• Compact FBGA footprint — 54‑ball FBGA (8×8 mm body, 0.8 mm pitch) supports dense PCB integration while maintaining necessary I/O.
• Wide supply tolerance — 1.7 V to 1.95 V supply range supports 1.8 V system designs and provides tolerance for supply variation.

Why Choose M52D5121632A-6BG?

The M52D5121632A-6BG balances high‑data‑rate synchronous operation with low‑voltage efficiency and a compact package, making it a practical choice for commercial mobile and high‑bandwidth memory systems. Its programmable timing, refresh and power modes give designers control over performance and power consumption, while JEDEC qualification and RoHS compliance support standardization and regulatory needs.

Manufactured by ESMT, this device is suitable for engineers specifying synchronous DRAM for space‑constrained designs that require predictable timing, flexible burst behavior, and standard SDRAM control interfaces.

Request a quote or submit an inquiry to obtain pricing and availability for the M52D5121632A-6BG and to discuss how it fits your next memory subsystem design.