M52D5121632A-5BG

The M52D5121632A-5BG is a 536,870,912‑bit Mobile Synchronous DRAM (SDRAM) organized as 4 × 8,388,608 words by 16 bits. It is a synchronous high data rate DRAM designed for precise cycle control using a system clock and supports up to 200 MHz operation.

Engineered for high-bandwidth, high-performance memory subsystems, this device offers programmable burst lengths and latencies, multiple low-power modes and standard JEDEC qualification, making it suitable for mobile and embedded designs that require 1.8 V operation in a compact 54‑ball FBGA package.

Key Features

• Memory Architecture 536,870,912‑bit organization as 4 × 8,388,608 words by 16 bits (8M × 16) with four-bank operation for concurrent access flexibility.
• Performance Supports a maximum frequency of 200 MHz with an access time of 4.5 ns and a write cycle time (word/page) of 10 ns.
• Programmable Burst and Latency CAS latency options 2 and 3; programmable burst lengths of 1, 2, 4, 8 and full page; burst types include Sequential and Interleave.
• Power and Voltage 1.8 V nominal supply (operating range 1.7 V to 1.95 V) with deep power down and self-refresh support for power management.
• Low‑Voltage Interface LVCMOS-compatible interface with separate VDDQ/VSSQ data output power domain for improved noise immunity.
• Advanced Refresh and Self-Refresh Auto and self refresh supported, including PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh); 64 ms refresh period (8K cycles).
• Reliability & Compliance JEDEC qualification and RoHS compliance.
• Package & Temperature 54‑ball FBGA (8 mm × 8 mm, 0.8 mm ball pitch) surface-mount package; commercial operating range 0 °C to 70 °C.

Typical Applications

• High‑bandwidth memory subsystems — Configurations that require synchronous high data rate DRAM with programmable burst lengths and latencies.
• Mobile devices and handheld electronics — Mobile SDRAM form factor and 1.8 V operation suitable for compact, low-voltage designs.
• Embedded and consumer designs — Systems needing JEDEC‑qualified, RoHS‑compliant SDRAM in a small FBGA package.

Unique Advantages

• Flexible timing and burst control: CAS latency options and multiple burst lengths let designers tune performance and bandwidth to system needs.
• Low-voltage operation: 1.8 V nominal supply (1.7 V–1.95 V) supports lower-power system designs while maintaining synchronous high-speed operation up to 200 MHz.
• Power management features: Deep Power Down, PASR and TCSR reduce standby energy and support temperature‑aware refresh behavior.
• Noise isolation for data I/O: Separate VDDQ/VSSQ power domains for output buffers improve signal integrity in mixed‑signal environments.
• Compact board footprint: 54‑ball FBGA package provides a small, surface‑mount solution for space‑constrained PCBs.
• Standards‑based qualification: JEDEC compliance and RoHS status make the device suitable for standardized production workflows.

Why Choose M52D5121632A-5BG?

The M52D5121632A-5BG positions itself as a synchronous, high-data-rate SDRAM option for designs that require 536.9 Mbit density, four‑bank operation and flexible timing control in a compact 54‑ball FBGA. Its 1.8 V operation, LVCMOS interface and support for power-saving modes make it a fit for mobile and embedded systems where low-voltage memory with programmable performance is required.

With JEDEC qualification, programmable burst lengths and refresh capabilities such as PASR and TCSR, this part suits engineers specifying robust, standards‑aligned memory for high‑bandwidth applications operating within a commercial temperature range.

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