M52D2561616A-7BIG2F

The M52D2561616A-7BIG2F is a synchronous low-power SDRAM device organized as 4 × 4,194,304 words by 16 bits, providing 268,435,456 bits of volatile memory in a 54-ball FBGA package. It implements a synchronous DRAM architecture with four banks and LVCMOS-compatible I/O for precise, clocked memory transactions.

Designed for industrial-grade applications, the device supports a 1.8V-class supply (1.7V–1.95V), JEDEC qualification, and an operating temperature range of −40°C to 85°C, making it suitable for board-level surface-mount embedded systems that require controlled timing, refresh, and low-voltage operation.

Key Features

• Memory Organization 268,435,456 bits organized as 4M × 16 with four internal banks for flexible addressing and parallel bank operation.
• Synchronous DRAM Architecture Inputs are sampled on the positive edge of the system clock; supports programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential & interleave).
• Performance and Timing Maximum frequency rating for this part is 143 MHz with CAS latency 3, access time of 6 ns and a write cycle time (word/page) of 14 ns.
• Low-Voltage Operation Nominal 1.8V power domain with an acceptable supply range of 1.7V to 1.95V, and separate VDDQ/VSSQ for output buffer power isolation.
• Refresh and Power Management Auto and self-refresh support with 64 ms refresh period (8K cycle), plus PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh) options.
• Signal and I/O Controls LVCMOS-compatible interface with DQM data masking, support for driver strength (DS) selection, and standard SDRAM control signals (CLK, CS, CKE, RAS, CAS, WE).
• Package and Mounting Surface-mount 54-ball FBGA (8 mm × 8 mm × 1 mm body, 0.8 mm ball pitch) for compact board-level integration.
• Industrial Grade and Compliance JEDEC-qualified device with an operating temperature range of −40°C to 85°C and RoHS compliance.

Typical Applications

• Mobile SDRAM-based systems Use where synchronous low-power SDRAM form-factor and burst access are required.
• Industrial embedded designs Suitable for embedded controllers and systems that require JEDEC-qualified memory and −40°C to 85°C operation.
• Board-level surface-mount implementations Compact 54-ball FBGA package fits space-constrained PCBs needing a 1.8V SDRAM solution.

Unique Advantages

• Four-bank architecture: Enables efficient memory management and bank interleaving for predictable, clocked access patterns.
• Programmable burst and latency options: Supports multiple burst lengths and CAS latency 3 to match system timing and throughput requirements.
• Temperature-compensated refresh features: PASR and TCSR support help optimize refresh behavior across a wide temperature range.
• Low-voltage, isolated I/O supply: 1.7V–1.95V supply range with separate VDDQ improves noise immunity for the output buffers.
• JEDEC-qualified industrial grade: Qualification and −40°C to 85°C rating provide predictable performance for industrial deployments.
• Compact FBGA package: 54-ball 8×8 FBGA offers a small footprint for high-density PCB layouts.

Why Choose M52D2561616A-7BIG2F?

The M52D2561616A-7BIG2F combines a synchronous low-power DRAM architecture with JEDEC qualification and industrial temperature capability, delivering a verifiable memory building block for embedded and industrial designs. Its four-bank organization, programmable burst modes, and 1.8V-class operation make it well suited for systems that require clocked, predictable memory behavior in a compact FBGA package.

This part is appropriate for engineers specifying board-level SDRAM where controlled timing, refresh options, and temperature resilience are prioritized. The device’s feature set supports integration into designs that need low-voltage operation, separate I/O power domains, and standard SDRAM control signaling.

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