M52D2561616A-5BIG2F

The M52D2561616A-5BIG2F is a 268,435,456‑bit (268.4 Mbit) low‑power synchronous DRAM organized as 4 × 4,194,304 words by 16 bits with four internal banks. It implements mobile SDRAM architecture with synchronous operation, multiplexed addresses and LVCMOS I/O to support precise, clocked memory transactions.

Designed for industrial temperature operation (−40°C to 85°C) and JEDEC qualification, this 1.8V device supports up to 200 MHz system clocking and features programmable burst lengths, CAS latency and refresh modes for use in high‑bandwidth, high‑performance memory system applications.

Key Features

• Memory & Organization 268,435,456 bits organized as 4M × 16 with four banks to support concurrent bank management and flexible data access patterns.
• Performance 200 MHz maximum clock frequency with CAS Latency 3 and a typical access time of 4.5 ns; write cycle time (word/page) listed at 10 ns for deterministic timing.
• Power & Voltage Low‑power 1.8V supply domain with an operating voltage range of 1.7V–1.95V to accommodate system tolerance and power management needs.
• Interface & Timing LVCMOS compatible inputs, multiplexed row/column addressing (A0–A12), and all inputs sampled on the positive edge of CLK for synchronous control.
• Burst & Command Flexibility Programmable burst lengths (1, 2, 4, 8 and full page), burst types (sequential & interleave) and MRS/EMRS configuration cycles for adaptable data transfer modes.
• Refresh & Low‑Power Modes Supports auto and self refresh, PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh); standard 64 ms refresh period (8K cycle).
• Signal & Output Control DQM data mask support, driver strength (DS) control and isolated VDDQ/VSSQ power domains for output buffer noise immunity and data integrity.
• Package & Mounting 54‑ball FBGA (8 mm × 8 mm body, 0.8 mm ball pitch), surface‑mount packaging suitable for compact, board‑mounted applications.
• Industrial Grade & Compliance Operating temperature −40°C to 85°C, JEDEC qualified and RoHS compliant.

Typical Applications

• Industrial Control & Automation — Industrial temperature rating and JEDEC qualification make this SDRAM suitable for embedded controllers and automation systems that require reliable memory under extended temperature ranges.
• High‑Performance Embedded Systems — Synchronous operation, 200 MHz clocking and programmable burst/latency settings support high‑bandwidth memory needs in compute‑intensive embedded designs.
• Mobile & Portable Platforms — Mobile SDRAM architecture and low‑voltage operation suit space‑ and power‑constrained portable devices that require synchronous DRAM behavior.

Unique Advantages

• Industrial temperature capability — Rated for −40°C to 85°C to meet the thermal demands of industrial applications.
• Flexible timing and transfer modes — Programmable CAS latency, multiple burst lengths and burst types let designers tune performance for specific system requirements.
• Low‑voltage operation with tolerance — 1.8V nominal supply and 1.7V–1.95V operating range enable lower power designs and accommodate supply variation.
• Compact BGA footprint — 54‑ball FBGA (8×8 mm) package supports high‑density PCB layouts while providing robust soldered mounting.
• Robust refresh and power‑down features — Auto/self refresh, PASR and TCSR options help manage power consumption and data retention across operating conditions.
• Standards and compliance — JEDEC qualification and RoHS compliance simplify integration into regulated product lines.

Why Choose M52D2561616A-5BIG2F?

The M52D2561616A-5BIG2F combines mobile SDRAM architecture with industrial temperature operation and JEDEC qualification to deliver a reliable, synchronous DRAM option for designs that require predictable timing and flexible data transfer modes. Its 4‑bank organization, programmable burst lengths and CAS latency settings provide adaptability for a range of high‑bandwidth embedded and industrial applications.

Backed by ESMT documentation and designed for surface‑mount deployment in a compact 54‑ball FBGA package, this device is well suited for engineers seeking a low‑power, synchronous memory building block that balances performance, thermal range and board‑level integration.

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