M52D2561616A-5BG2F

The M52D2561616A-5BG2F from ESMT is a mobile synchronous DRAM device organized as 4M × 16 bits × 4 banks, providing a high-data-rate volatile memory option for commercial applications. It operates with a 1.8V supply domain (1.7V–1.95V specified) and supports a 200 MHz maximum clock frequency, offering system designers a low-voltage, synchronous DRAM building block with JEDEC qualification and RoHS compliance.

Designed for high-bandwidth memory subsystems, the device supports programmable burst lengths and latencies, four-bank operation, and standard LVCMOS I/O compatibility for integration into embedded and mobile memory architectures.

Key Features

• Memory Core  Organized as 4 × 4,194,304 words by 16 bits for a total of 268,435,456 bits (series labeled as 256Mbit). Four-bank architecture enables bank-level operations.
• Performance  Supports up to 200 MHz system clock with an access time of 4.5 ns and CAS Latency 3. Write cycle time (word/page) is specified at 10 ns.
• Burst and Transfer Modes  Programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) provide flexible data transfer patterns.
• Power and Voltage  Nominal 1.8V operation with an acceptable supply range of 1.7V to 1.95V to support low-voltage system designs.
• Interface and I/O  LVCMOS-compatible inputs with multiplexed address lines, 16-bit data I/O (DQ0–DQ15), and data mask (DQM) support for masked reads/writes.
• System Reliability and Refresh  Supports auto and self refresh, PASR (Partial Array Self Refresh), TCSR (Temperature Compensated Self Refresh), and a 64 ms refresh period (8K cycle) for standard refresh management.
• Special Function Support  Features MRS and EMRS cycles, driver strength (DS) control and sampled inputs on the positive clock edge for synchronous operation.
• Package and Temperature  Surface-mount 54-ball FBGA (8 mm × 8 mm, 0.8 mm pitch) package. Commercial operating temperature range 0 °C to 70 °C.
• Compliance  JEDEC qualification and RoHS-compliant (Pb-free) ordering option indicated for the listed version.

Typical Applications

• Mobile and Handheld Devices  Mobile SDRAM organization and low-voltage operation make it suitable for memory subsystems in portable equipment requiring synchronous DRAM.
• Embedded Memory Subsystems  Four-bank operation and programmable burst lengths support embedded systems that need flexible high-bandwidth data transfers.
• High-Bandwidth Consumer Electronics  The 200 MHz clock capability and CAS latency options provide predictable timing for consumer products with synchronous memory interfaces.

Unique Advantages

• Flexible Data Transfer Modes: Programmable burst lengths and burst types enable optimized throughput for a range of access patterns.
• Low-Voltage Operation: 1.8V nominal supply with a defined operating range helps reduce overall system power compared to higher-voltage DRAM options.
• Compact, Board-Space Efficient Package: 54-ball FBGA (8×8) surface-mount package conserves board area for space-constrained designs.
• Robust Refresh and Low-Power Features: PASR and TCSR support along with auto/self-refresh and a standard 64 ms refresh period simplify power-managed memory operation.
• JEDEC Qualification and RoHS Compliance: Industry-standard qualification and Pb-free option support regulatory and supply-chain requirements.
• System-Level Compatibility: LVCMOS-compatible I/O and standard SDRAM control signals (CLK, RAS, CAS, WE, BA, A0–A12) enable integration with common memory controllers.

Why Choose M52D2561616A-5BG2F?

The M52D2561616A-5BG2F positions itself as a versatile mobile SDRAM component delivering synchronous, low-voltage memory with configurable latency and burst behavior. Its four-bank architecture, JEDEC qualification, and refresh control features make it appropriate for commercial designs that require predictable timing and standard DRAM interfaces.

This device is suited to engineers and procurement teams building embedded and mobile memory subsystems where board-space efficiency, low-voltage operation, and JEDEC-aligned behavior are important. Vendor-provided datasheet specifications and package options support long-term design planning and BOM definition.

Request a quote or submit an inquiry for pricing and availability for the M52D2561616A-5BG2F to evaluate it for your next memory subsystem design.