M52D2561616A-7BG2F
| Part Description |
LPSDR SDRAM 256Mbit (4M×16×4 Banks), 143 MHz, 1.8V, 54-Ball FBGA, Commercial |
|---|---|
| Quantity | 554 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 54-FBGA (8x8) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 6 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 1.7V ~ 1.95V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 14 ns | Packaging | 54-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | LVCMOS | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.24 |
Overview of M52D2561616A-7BG2F – LPSDR SDRAM 256Mbit (4M×16×4 Banks), 143 MHz, 1.8V, 54-Ball FBGA, Commercial
The M52D2561616A-7BG2F is a mobile synchronous DRAM device organized as 4,194,304 words × 16 bits across four banks, delivering 268,435,456 bits (268.4 Mbit) of volatile memory. It implements synchronous operation with inputs sampled on the positive edge of the system clock and supports programmable burst lengths and latencies for flexible throughput control.
Designed for space- and power-sensitive embedded systems, this device operates from a 1.7 V to 1.95 V supply and targets applications that require compact, JEDEC-qualified SDRAM in a 54-ball FBGA (8×8 mm) package operating across a commercial temperature range.
Key Features
- Memory Organization 4M × 16-bit organization with four banks, providing 268.4 Mbit of synchronous DRAM capacity for high-density embedded memory needs.
- Performance Rated for 143 MHz operation with CAS Latency = 3 and access time of 6 ns; programmable burst lengths (1, 2, 4, 8, full page) and burst types (sequential & interleave) enable flexible data transfer modes.
- Power 1.8 V nominal supply range (1.7 V–1.95 V) tailored for low-voltage mobile and hand-held designs.
- Refresh & Self-Refresh Supports auto and self-refresh modes with a 64 ms refresh period (8K cycles), plus PASR and TCSR for partial and temperature-compensated self-refresh control.
- Interface & Control LVCMOS-compatible interface with multiplexed addresses, system clock sampling on the positive edge, and standard SDRAM command signals (CLK, CS, CKE, RAS, CAS, WE, BA, A0–A12).
- Signal & Data Management DQM for data masking, driver strength (DS) control, and support for MRS/EMRS programming cycles to configure device modes.
- Package & Mounting 54-ball FBGA (8 mm × 8 mm × 1 mm body, 0.8 mm ball pitch), surface-mount package optimized for compact PCB layouts.
- Qualification & Compliance JEDEC-qualified device and RoHS compliant for standard industry interoperability and environmental compliance.
- Operating Range Commercial temperature grade with an operating temperature range of 0 °C to 70 °C.
Typical Applications
- Mobile and Handheld Devices Provides compact, low-voltage synchronous memory suitable for space-constrained mobile applications that require programmable burst behavior.
- Consumer Electronics Used where mid-density DRAM is needed for buffering and temporary storage in consumer devices operating in commercial temperature ranges.
- Embedded Systems Fits embedded controllers and modules that require a JEDEC-compatible SDRAM interface with four-bank operation for concurrent access patterns.
Unique Advantages
- Flexible Throughput Control: CAS Latency = 3 and selectable burst lengths/types enable designers to tune performance for different access patterns and system clocks.
- Low-Voltage Operation: 1.7 V–1.95 V supply reduces system power compared with higher-voltage DRAM alternatives while maintaining synchronous operation.
- Compact FBGA Package: 54-ball FBGA (8×8 mm) minimizes PCB area for dense boards and portable product designs.
- Robust Refresh Options: PASR and TCSR plus standard auto/self-refresh and 64 ms refresh period support power-efficient and reliable data retention strategies.
- JEDEC Qualification & RoHS Compliance: Industry-standard qualification and environmental compliance simplify integration into mainstream product lines.
- Signal Control Features: DQM, driver strength control, and programmable MRS/EMRS modes help manage I/O behavior and signal integrity in varied system environments.
Why Choose M52D2561616A-7BG2F?
The M52D2561616A-7BG2F balances mid-density capacity, flexible synchronous performance, and low-voltage operation in a compact 54-ball FBGA package. Its JEDEC qualification, programmable latency and burst options, and advanced refresh/self-refresh features make it suitable for designers needing predictable, configurable SDRAM behavior in commercial embedded and mobile products.
This device is well-suited for teams building space- and power-conscious systems that require a standardized SDRAM interface, deterministic timing, and a compact package footprint, delivering a straightforward integration path for a range of consumer and embedded applications.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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