M52D256328A-7BG2F

The M52D256328A-7BG2F is a 268.4 Mbit mobile Synchronous DRAM organized as 4 × 2,097,152 words by 32 bits. It delivers synchronous, high-data-rate operation with a multiplexed address interface and a four-bank architecture for predictable, clock-aligned memory cycles.

Designed for commercial-grade applications, the device operates from a 1.7 V to 1.95 V supply, supports JEDEC qualification, and is offered in a compact 90‑ball FBGA (8×13) surface-mount package with an operating temperature range of 0 °C to 70 °C.

Key Features

• Memory Organization 268.4 Mbit capacity arranged as 2M × 32 with 4 internal banks to support concurrent bank operations.
• Performance Operates at up to 143 MHz with a 6 ns access time and a 14 ns write cycle time (word/page). CAS Latency of 3 and programmable burst lengths (1, 2, 4, 8 and full page) enable flexible throughput tuning.
• Interface & Control LVCMOS-compatible I/O with multiplexed addresses (A0–A11), bank address pins (BA0/BA1), and standard control signals (CLK, CKE, CS, RAS, CAS, WE). All inputs are sampled on the positive edge of the system clock.
• Power Low-voltage operation over a 1.7 V–1.95 V supply range suitable for systems targeting 1.8 V memory rails.
• Refresh & Power Management Supports auto and self-refresh, PASR (Partial Array Self Refresh), TCSR (Temperature Compensated Self Refresh) and a 64 ms refresh period (4K cycle).
• Advanced Mode & Timing Controls MRS and EMRS cycles for mode programming, driver strength (DS) control, DQM masking, and selectable burst type (sequential/interleave).
• Package & Mounting 90‑ball FBGA (8 mm × 13 mm × 1.2 mm body, 0.8 mm ball pitch) for compact surface-mount integration; commercial grade operating range 0 °C to 70 °C.

Typical Applications

• Mobile and handheld devices Mobile SDRAM architecture and 1.8 V operation make the device suitable for space-constrained mobile memory subsystems.
• High-bandwidth memory systems Four-bank organization, programmable burst lengths and CAS Latency 3 support designs that require predictable, clock-aligned high-rate data transfers.
• Low-voltage embedded designs Systems targeting 1.8 V memory rails can leverage the device's 1.7 V–1.95 V supply range for compatibility with low-voltage architectures.
• Compact surface-mount assemblies The 90‑ball FBGA package enables dense PCB layouts where board area and component height are constrained.

Unique Advantages

• Low-voltage operation: 1.7 V–1.95 V supply range provides compatibility with 1.8 V system rails and helps reduce overall memory power draw.
• Flexible throughput controls: Programmable burst lengths, burst types and CAS Latency 3 allow designers to tune performance for diverse memory access patterns.
• Four-bank architecture: Banked operation improves effective concurrency and helps maintain steady data flow for high-rate transactions.
• Robust refresh and power management: Auto/self-refresh, PASR and TCSR features support reliable data retention and thermal-aware refresh management.
• JEDEC-qualified commercial grade: JEDEC qualification and standard SDRAM controls simplify system integration and interoperability.
• Compact package: 90‑ball FBGA (8×13) surface-mount package allows high-density board implementations while preserving signal routing flexibility.

Why Choose M52D256328A-7BG2F?

The M52D256328A-7BG2F combines a mobile SDRAM architecture with JEDEC-qualified design and low-voltage operation to deliver a compact, clock-synchronous memory solution for commercial high-bandwidth applications. Its programmable timing, burst options and four-bank organization make it suitable for systems that require predictable, high-rate data transfers in a small package footprint.

This part is well suited for designers building mobile or compact memory subsystems that need 1.8 V operation, flexible performance tuning, and standard SDRAM controls in a surface-mount 90‑ball FBGA package.

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