M52D5121632A-5BIG

The M52D5121632A-5BIG is a 536,870,912‑bit mobile synchronous DRAM organized as 4 × 8,388,608 words by 16 bits. It delivers synchronous high‑data‑rate operation with four internal banks and LVCMOS‑compatible signaling for integration into memory subsystems.

With a 1.8V supply window (1.7V–1.95V), a maximum clock rate of 200 MHz, JEDEC qualification and an industrial operating range of −40°C to 85°C, this device targets high‑bandwidth, high‑performance memory system applications that require compact FBGA packaging and robust refresh and low‑power modes.

Key Features

• Memory Architecture Organized as 4 × 8,388,608 words by 16 bits (536,870,912 bits total) with four internal banks for concurrent bank operation and efficient access.
• Performance Supports up to 200 MHz operation with CAS latency options (2, 3) and programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential & interleave) for flexible throughput tuning.
• Timing and Access Access time 4.5 ns and write cycle time (word/page) 10 ns provide deterministic timing for synchronous designs; all inputs are sampled on the rising edge of CLK.
• Power and Low‑Power Modes 1.8V nominal supply (operating range 1.7V–1.95V) with Deep Power Down (DPD) mode, auto and self refresh, PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh) for power‑sensitive systems.
• Control and Data Integrity L(U)DQM supports data mask and I/O masking; DQM for masking and isolated VDDQ/VSSQ power domains for output buffer noise isolation.
• Command and Configuration Supports MRS and EMRS cycles for mode programming and driver strength (DS) configuration via address keys.
• Standards & Reliability JEDEC qualification and a 64 ms refresh period (8K cycles) for standard DRAM refresh management.
• Package & Temperature 54‑ball FBGA (8 mm × 8 mm, 0.8 mm pitch) surface‑mount package and industrial temperature rating from −40°C to 85°C.

Typical Applications

• High‑performance memory subsystems — Use as main or auxiliary SDRAM in systems requiring synchronous, banked memory with programmable latency and burst control.
• Mobile and portable devices — Mobile SDRAM architecture and 1.8V operation suit compact, power‑sensitive implementations that benefit from DPD and self‑refresh options.
• Industrial embedded systems — Industrial operating temperature range (−40°C to 85°C) supports deployment in temperature‑challenging environments.

Unique Advantages

• Flexible performance tuning: CAS latency and multiple burst length/type options let designers optimize latency and throughput for target workloads.
• Low‑voltage operation: 1.7V–1.95V supply range enables compatibility with 1.8V power domains and helps reduce overall system power.
• Comprehensive low‑power features: Deep Power Down, PASR and TCSR provide multiple mechanisms to reduce standby power and adapt refresh behavior to system needs.
• Industrial temperature rating: −40°C to 85°C qualification ensures consistent operation across a wide thermal range for industrial applications.
• Compact, industry‑standard package: 54‑ball FBGA (8×8 mm) supports high‑density PCB layouts while maintaining JEDEC qualification.
• Robust refresh and control: Standard 64 ms refresh period (8K cycles), MRS/EMRS programming and DQM control simplify memory management and signal integrity.

Why Choose M52D5121632A-5BIG?

The M52D5121632A-5BIG combines synchronous mobile SDRAM architecture with JEDEC qualification, industrial temperature range and a compact FBGA package to deliver a reliable, configurable memory building block for high‑bandwidth embedded designs. Its banked organization, programmable latency and burst options provide designers with the timing flexibility needed for a variety of memory subsystem implementations.

This device is well suited for applications that require low‑voltage operation, explicit low‑power modes and a standardized package footprint—offering predictable timing, refresh management and control features backed by the device's built‑in mode programming and driver strength options.

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