M52D5121632A-7BG

The M52D5121632A-7BG is a Mobile Synchronous DRAM device providing 536,870,912 bits of volatile memory organized as 4 × 8,388,608 words by 16 bits. Designed for synchronous high-data-rate operation, the device supports precise cycle control with inputs sampled on the positive edge of the system clock.

Targeted for high-bandwidth, high-performance memory system applications, this 143 MHz, low-voltage SDRAM combines programmable burst lengths and latencies with a compact 54-ball FBGA package and JEDEC qualification for commercial use.

Key Features

• Memory Core & Organization  536,870,912 bits organized as 8M × 16 with four internal banks for parallelized operation.
• Synchronous Operation  Inputs are sampled on the positive edge of the system clock to enable predictable, high-data-rate transfers.
• Performance & Timing  143 MHz maximum frequency with typical access time of 6 ns and a write cycle time (word/page) of 14 ns; supports CAS latency 2 and 3.
• Burst and Addressing Flexibility  Programmable burst lengths (1, 2, 4, 8, full page) and burst types (sequential/interleave) with multiplexed row/column addressing.
• Low-Voltage Supply  Operates from 1.7 V to 1.95 V (nominal 1.8 V) to support low-voltage system designs.
• Power Management  Deep Power Down (DPD) mode, auto and self-refresh, PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh) for reduced power in standby and refresh scenarios.
• Interface & Control  LVCMOS-compatible inputs, DQM data mask, standard SDRAM control signals (CLK, CS, CKE, RAS, CAS, WE, BA, A0–A12, DQ0–DQ15) and support for MRS/EMRS programming.
• Package & Environmental  54-ball FBGA (8 mm × 8 mm × 1 mm body, 0.8 mm ball pitch) surface-mount package; JEDEC qualification; RoHS compliant; operating temperature 0 °C to 70 °C.

Typical Applications

• Mobile devices  Mobile SDRAM architecture and low-voltage operation make the device suitable for memory subsystems in portable electronics.
• High-bandwidth memory subsystems  Four-bank organization and programmable burst behavior support systems requiring sustained data throughput.
• Embedded multimedia  Programmable latencies and burst types enable flexible buffering and streaming in handheld multimedia and imaging applications.

Unique Advantages

• Programmable performance  CAS latency options and multiple burst-length settings let designers tune latency and throughput to match system requirements.
• Low-voltage efficiency  1.7 V–1.95 V supply range (nominal 1.8 V) lowers power draw compared with higher-voltage memories while supporting standard LVCMOS signaling.
• Compact package  54-ball FBGA (8×8 mm) surface-mount package reduces board footprint for space-constrained designs.
• Robust refresh and standby modes  Auto/self-refresh, PASR, TCSR and Deep Power Down provide multiple options to minimize power during idle periods and varying thermal conditions.
• Standards-based qualification  JEDEC qualification and RoHS compliance provide predictable interoperability and environmental compliance for commercial designs.

Why Choose M52D5121632A-7BG?

The M52D5121632A-7BG delivers synchronous, high-data-rate DRAM functionality in a compact 54-ball FBGA package with a full feature set for power management and timing control. Its 4-bank organization, programmable burst and latency options, and LVCMOS interface make it well suited to designers building high-bandwidth memory subsystems for mobile and embedded applications.

With JEDEC qualification, RoHS compliance, and operational parameters specified (1.7 V–1.95 V supply, 0 °C–70 °C operating range, 143 MHz maximum frequency), this SDRAM device provides a verifiable component choice for commercial designs that require predictable timing, flexible refresh/power modes and a small form factor.

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