M52D5121632A-6BIG

The M52D5121632A-6BIG is a 536,870,912‑bit low‑power SDRAM (LPSDR) organized as 4 × 8,388,608 words by 16 bits. It is a mobile synchronous DRAM designed for high data‑rate, clocked operation with system transactions on every clock cycle.

As an industrial‑grade, JEDEC‑qualified memory device, it combines 1.8V low‑voltage operation, selectable timing and burst options, and multiple power‑management modes to address embedded and industrial memory system requirements across a wide operating temperature range.

Key Features

• Memory Core & Organization — 536,870,912 bits total capacity organized as 8M × 16 with four internal banks to support concurrent bank operations and high throughput.
• Clock and Timing — Specified for 166 MHz operation (M52D5121632A-6BIG variant) with an access time of 5 ns and a write cycle time (word/page) of 12 ns; supports CAS latency options of 2 and 3.
• Programmable Burst and Addressing — Burst lengths of 1, 2, 4, 8 and full page plus sequential and interleaved burst types; multiplexed row/column addressing (A0–A12) and bank select (BA0, BA1).
• Low‑Voltage I/O and Interface — 1.8V supply operation (1.7V–1.95V range) with LVCMOS compatible inputs; all inputs sampled on the positive edge of the system clock for synchronous timing.
• Power Management and Data Integrity — Supports Deep Power Down (DPD), Auto and Self Refresh, Partial Array Self Refresh (PASR), Temperature Compensated Self Refresh (TCSR), and DQM data masking; 64 ms refresh period (8K cycle).
• I/O Power Domain Isolation — Separate VDDQ/VSSQ for output buffers to provide improved noise immunity for data I/O.
• Package & Environmental — 54‑ball FBGA (8 mm × 8 mm × 1 mm body, 0.8 mm ball pitch) surface‑mount package; industrial operating temperature −40°C to 85°C; RoHS compliant; JEDEC qualified.

Unique Advantages

• Flexible performance scaling: Programmable CAS latencies and multiple burst lengths let designers tune throughput and latency to match system requirements.
• Industrial temperature capability: Rated for −40°C to 85°C operation for reliable performance across harsh environments where thermal range matters.
• Low‑voltage operation: 1.8V nominal supply with a specified voltage range enables reduced power supply complexity for low‑power systems.
• Comprehensive power‑save modes: Deep Power Down, PASR and TCSR provide options for minimizing power draw while retaining refresh flexibility.
• Improved signal integrity: Isolated data output power (VDDQ/VSSQ) enhances noise immunity for cleaner data I/O in high‑speed designs.
• Industry standard qualification: JEDEC qualification and RoHS compliance simplify integration into regulated, production hardware.

Why Choose M52D5121632A-6BIG?

The M52D5121632A-6BIG is positioned for designs that require a synchronous, low‑voltage SDRAM with configurable timing, multiple power‑management modes, and an industrial temperature rating. Its mobile SDRAM architecture and four‑bank organization make it suitable for high‑data‑rate memory subsystems where precise clocked control and flexible burst handling are required.

With JEDEC qualification, RoHS compliance, an isolated I/O power domain, and a compact 54‑ball FBGA package, this device addresses reliability and integration needs for industrial and embedded memory applications that demand predictable timing, power efficiency, and broad temperature tolerance.

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