M52D5123216A-6BG

The M52D5123216A-6BG is a synchronous low-power SDRAM device providing 536,870,912 bits (512 Mbit) of memory organized as 4,194,304 words × 32 bits across 4 banks. It implements a synchronous DRAM architecture with a 166 MHz clock rate and LVCMOS-compatible I/O to support timed, high-data-rate system cycles.

Designed for commercial-grade embedded and mobile applications, the device offers programmable burst lengths and latencies, multiple low-power modes and a compact 90-ball BGA (8 mm × 13 mm × 1.0 mm, 0.8 mm ball pitch) package suitable for space-constrained designs.

Key Features

• Memory Core — 536,870,912‑bit (512 Mbit) SDRAM organized as 4M × 32 with four banks for concurrent bank operations and improved effective throughput.
• Performance — Specified for 166 MHz operation with an access time of 5 ns and a write cycle time (word page) of 12 ns; supports CAS latency values of 2 and 3.
• Programmable Burst and Modes — Supports burst lengths of 1, 2, 4, 8 and full page with sequential and interleave burst types; MRS and EMRS cycles for mode programming.
• Low‑Voltage Operation — Operates across a 1.7 V to 1.95 V supply range (nominal 1.8 V) to match low-voltage system designs.
• Power Management — Features Deep Power Down (DPD) mode, auto and self refresh, PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh) for flexible power/state control.
• Interface and Control — LVCMOS-compatible inputs with multiplexed address pins (A0–A12), DQM masking, BA0/BA1 bank select, and inputs sampled on the positive edge of CLK for synchronous timing.
• Package and Temperature — 90-ball BGA (8 mm × 13 mm × 1.0 mm body, 0.8 mm ball pitch) surface-mount package; commercial operating temperature range 0 °C to 70 °C.
• Standards and Compliance — JEDEC-qualified design and RoHS-compliant materials.
• Refresh — Supports standard auto/self refresh with a 64 ms refresh period (8K cycle).

Typical Applications

• Mobile and Handheld Devices — Mobile SDRAM architecture and low-voltage 1.8 V operation make the device suitable for compact battery-powered designs requiring synchronous high-data-rate memory.
• Consumer Electronics — Useful for embedded memory in consumer products that need a small-footprint BGA package and configurable burst/latency settings for varying workload demands.
• Multimedia and Graphics Buffers — Four-bank organization and programmable burst modes support applications that require sustained data transfer and predictable synchronous timing.
• Embedded Systems — Commercial-grade operating range and JEDEC qualification make the device appropriate for a wide range of embedded system memory needs.

Unique Advantages

• High-density SDRAM in a compact package: 512 Mbit capacity in a 90-ball BGA (8×13 mm) reduces PCB area while providing large on-board memory.
• Flexible timing and burst options: Programmable CAS latency and burst lengths allow tuning for different throughput and latency trade-offs in system designs.
• Comprehensive low-power features: Deep Power Down, PASR and TCSR plus auto/self refresh modes enable multiple strategies for reducing active and idle power.
• Precise synchronous operation: Inputs sampled on the positive edge of CLK and LVCMOS-compatible interface deliver deterministic timing for clocked memory systems.
• JEDEC-qualified and RoHS-compliant: Industry-standard qualification and materials compliance support reliable integration into commercial products.

Why Choose M52D5123216A-6BG?

The M52D5123216A-6BG provides a balanced combination of density, synchronous performance and low-voltage operation for commercial embedded and mobile applications. Its four-bank organization, programmable latency and burst modes make it adaptable to a range of memory access patterns while the compact 90-ball BGA package helps optimize board real estate.

This device is suitable for designers who require JEDEC-qualified SDRAM with flexible power-management options and predictable synchronous timing at 166 MHz. Its combination of features supports scalable system designs with a focus on integration, timing control and standard-compliant implementation.

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