M52D5123216A-7BG

The M52D5123216A-7BG from ESMT is a 536,870,912‑bit mobile synchronous DRAM organized as 4,194,304 × 32 with four internal banks. This low‑voltage SDRAM (LPSDR) delivers synchronous, high‑data‑rate operation with an LVCMOS interface and JEDEC qualification for use in high‑bandwidth, high‑performance memory system applications.

Key design attributes include a 1.8 V power supply range (1.7–1.95 V), a maximum clock frequency of 143 MHz for the -7BG option, a compact 90‑ball BGA (8 × 13) surface‑mount package, and a commercial operating temperature range of 0 °C to 70 °C.

Key Features

• Memory Core 536,870,912‑bit organization as 4,194,304 × 32 with four banks for parallel internal bank operation and efficient data throughput.
• Performance Rated for 143 MHz operation (M52D5123216A-7BG), with access time listed at 6 ns and write cycle time (word/page) of 14 ns.
• Programmable Latency & Burst Supports CAS latency options (2, 3) and programmable burst lengths (1, 2, 4, 8, full page) with sequential and interleave burst types.
• Low‑Voltage Operation Nominal 1.8 V power supply with an allowed range of 1.7 V to 1.95 V for low-power system designs.
• Low‑Power & Self‑Refresh Modes Deep Power Down (DPD) mode, auto and self refresh, PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh) for power management.
• Interface & Control LVCMOS compatible I/O with multiplexed address pins; all inputs sampled on the positive clock edge. DQM support for data masking and MRS/EMRS for mode programming.
• Reliability & Refresh 64 ms refresh period (8K cycles) and support for driver strength (DS) control to help match system timing and signaling requirements.
• Package & Mounting 90‑ball BGA (8 mm × 13 mm × 1.0 mm body, 0.8 mm ball pitch), surface mount package suitable for space‑constrained PCBs.
• Grade & Compliance Commercial grade (0 °C to 70 °C), JEDEC qualification, Pb‑free and RoHS compliant.

Typical Applications

• High‑bandwidth memory subsystems — Suitable for designs that require synchronous DRAM with programmable burst lengths and multi‑bank operation to sustain high data throughput.
• Mobile and handheld devices — Mobile SDRAM architecture and 1.8 V supply make the device appropriate for compact, battery‑aware designs operating in the commercial temperature range.
• Consumer electronics — Use in consumer systems that need 512 Mbit of volatile storage in a small BGA footprint with JEDEC‑level interoperability.

Unique Advantages

• High‑capacity, compact footprint: 512 Mbit density in a 90‑ball BGA (8 × 13) delivers large memory capacity while minimizing PCB area.
• Flexible performance scaling: Programmable CAS latencies and burst lengths plus four internal banks allow designers to tune throughput and latency for target workloads.
• Power management features: Deep Power Down, auto/self refresh, PASR and TCSR provide multiple options to reduce standby power and manage refresh across temperature conditions.
• System‑friendly signaling: LVCMOS compatibility and positive‑edge clock sampling simplify timing across common memory controller interfaces.
• Industry compatibility: JEDEC qualification and Pb‑free/RoHS compliance support integration into standard commercial product supply chains.

Why Choose M52D5123216A-7BG?

The M52D5123216A-7BG positions itself as a practical choice for designers needing a mid‑density, low‑voltage synchronous DRAM with programmable latency and burst controls. Its combination of 536,870,912‑bit capacity, four banks, and a 1.8 V operating point supports a range of high‑bandwidth memory system designs where board space and power efficiency matter.

With JEDEC qualification, multiple low‑power modes, and a compact 90‑ball BGA package, this device is well suited to commercial‑grade mobile and consumer electronic applications that require predictable timing, refresh control, and industry‑standard signaling.

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