M53D2561616A-6BG2F

The M53D2561616A-6BG2F from ESMT is a mobile LPDDR SDRAM device organized as 4M×16. It implements an internal pipelined double-data-rate architecture that provides two data accesses per clock cycle, optimized for low-voltage mobile and embedded memory applications.

This device operates from 1.7V to 1.95V, runs at up to 166 MHz for the -6 speed grade, and is supplied in a compact 60-ball UFBGA package (8mm × 13mm body). It targets systems that require JEDEC-standard LPDDR functionality in a surface-mount BGA form factor.

Key Features

• Memory Organization & Size 4M × 16 organization; memory size listed in specifications as 268.4 Mbit and identified in product naming as 256Mbit (4M×16).
• DDR Architecture Internal pipelined double-data-rate architecture providing two data transfers per clock cycle, with bi-directional data strobe (DQS) for read/write timing.
• Timing & Performance Clock frequency up to 166 MHz for the -6 device; CAS latency = 3. Access time documented at 5.5 ns and write cycle time (word page) at 15 ns.
• Burst & Command Support Supports burst lengths of 2, 4, 8, and 16 with sequential and interleave burst types, plus JEDEC-standard command set and four-bank operation.
• Low-Voltage Operation VDD / VDDQ operating range 1.7V to 1.95V to support low-power system designs.
• Advanced Power Management Auto and self refresh capability with a 7.8 µs refresh interval (64 ms refresh period, 8K cycle), PASR (Partial Array Self Refresh) and temperature compensated self refresh (TCSR).
• Interface & I/O Differential clock inputs, LVCMOS-compatible inputs, data mask (DM) for write masking, and no DLL (CLK to DQS is not synchronized); DQS edge- and center-alignment behaviors specified for READ and WRITE respectively.
• Package & Mounting 60-ball UFBGA (60-BGA, 8×13) surface-mount package; body dimensions 8 mm × 13 mm × 1.2 mm with 0.8 mm ball pitch as specified in the datasheet.
• Standards & Compliance JEDEC-standard LPDDR SDRAM architecture; RoHS compliant.
• Operating Range Commercial grade with ambient operating temperature 0 °C to 70 °C.

Typical Applications

• Mobile and Handheld Devices Mobile DDR SDRAM architecture and low-voltage operation make this device suitable for memory subsystems in portable electronics.
• Portable Consumer Electronics Compact 60-ball UFBGA package enables integration in space-constrained consumer designs where JEDEC LPDDR capability is required.
• Embedded Systems Four-bank operation, burst-mode transfers, and self-refresh features support embedded memory needs in battery-powered systems.

Unique Advantages

• Double-Data-Rate Throughput Two data accesses per clock cycle via internal pipelined DDR architecture increase effective memory bandwidth for burst transfers.
• Low-Voltage, Power-Aware Operation 1.7V–1.95V supply range combined with auto/self refresh and TCSR helps reduce system power in mobile and battery-powered applications.
• Flexible Data Timing Bi-directional DQS with specified edge alignment for READ and center alignment for WRITE supports robust timing across read/write operations.
• JEDEC Compliance Conformance to JEDEC LPDDR standards simplifies design integration and interoperability in JEDEC-based memory subsystems.
• Compact Surface-Mount Package 60-ball UFBGA (8×13) package offers a small footprint for designs with constrained PCB area while preserving required power and data pins.
• Built-in Power Management Features PASR and temperature-compensated self-refresh reduce active power and maintain data retention across typical refresh cycles.

Why Choose M53D2561616A-6BG2F?

The M53D2561616A-6BG2F balances DDR performance and low-voltage operation in a compact 60-ball UFBGA package, making it a practical choice for JEDEC-standard mobile and embedded memory designs. With a documented 166 MHz speed grade, CAS latency 3, and on-die power-management features like PASR and TCSR, the device addresses system-level needs for burst performance and low-power retention.

This LPDDR SDRAM is well suited for engineers specifying a JEDEC-compliant, low-voltage SDRAM organized as 4M×16 and packaged for space-constrained surface-mount assemblies. Its combination of timing characteristics, interface features, and package geometry supports scalable memory implementations in commercial-grade designs.

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