M53D2561616A-7.5BG2F

The M53D2561616A-7.5BG2F is a Mobile LPDDR SDRAM device offered in a compact 60-ball BGA package. It implements a pipelined double-data-rate architecture with four internal banks and a 4M × 16 memory organization.

Targeted for space-constrained, low-voltage systems, this JEDEC‑qualified commercial-grade memory operates from 1.7V to 1.95V and is specified for 133 MHz system clock operation with an operating ambient range of 0 °C to 70 °C.

Key Features

• Memory Organization & Density — 4M × 16 organization delivering a density listed as 268.4 Mbit, compatible with LPDDR mobile memory applications.
• DDR Architecture — Internal pipelined double-data-rate architecture providing two data accesses per clock cycle; CAS Latency = 3 and burst length options of 2, 4, 8, and 16.
• Clocking & Timing — Differential clock inputs (CLK and CLK̅). Note: no DLL; CLK to DQS is not synchronized. Typical access time is 6 ns and write cycle time (word page) is 15 ns.
• Data Strobe and Masking — Bi-directional data strobe (DQS) with edge-aligned DQS for READ and center-aligned DQS for WRITE; separate upper/lower DM signals for write masking (UDM/LDM).
• Low‑Voltage Supply — VDD/VDDQ operating range 1.7 V to 1.95 V for low-voltage system compatibility.
• Refresh & Power Management — Auto and self refresh support with a 7.8 µs refresh interval (64 ms refresh period, 8K cycles); includes PASR and temperature-compensated self refresh (TCSR).
• Input Compatibility — LVCMOS-compatible inputs and drive-strength (DS) control options to match system I/O requirements.
• Package — 60-ball UFBGA (60‑BGA, 8 mm × 13 mm body, 0.8 mm ball pitch, 1.2 mm body height) optimized for compact board layouts.
• Qualification & Grade — JEDEC-qualified, commercial grade with operating ambient temperature 0 °C to 70 °C.

Typical Applications

• Mobile Devices — Compact LPDDR memory for mobile and handheld devices requiring low-voltage DDR interfaces and small-package footprints.
• Compact Embedded Systems — Board-level system memory in space-constrained embedded designs that require JEDEC‑standard DDR operation at 133 MHz.
• Consumer & Commercial Electronics — Dense, low-voltage SDRAM for commercial-grade consumer electronics operating within 0 °C to 70 °C.

Unique Advantages

• Low‑Voltage Operation: Native 1.7 V–1.95 V VDD/VDDQ range supports lower supply voltages common in mobile architectures.
• DDR Throughput per Clock: Pipelined DDR architecture enables two data transfers per clock cycle, increasing effective bandwidth at 133 MHz.
• Flexible Burst and Timing Options: CAS Latency = 3 and multiple burst lengths (2/4/8/16) enable tuning for varied access patterns and system designs.
• Compact BGA Footprint: 60-ball UFBGA (8 mm × 13 mm) reduces board area for compact system layouts while providing full LPDDR signaling.
• Standard Compliance: JEDEC qualification and LVCMOS-compatible inputs simplify integration with standard memory controllers and design flows.
• Power & Refresh Management: Auto/self refresh, PASR and TCSR features support robust refresh handling and thermal-aware retention strategies.

Why Choose M53D2561616A-7.5BG2F?

The M53D2561616A-7.5BG2F positions itself as a compact, JEDEC‑qualified LPDDR memory device for designs that need a low-voltage, double-data-rate solution in a small BGA footprint. Its 4M × 16 organization, DDR architecture, and selectable burst/timing modes make it suitable for systems requiring predictable DDR behavior at 133 MHz.

This device is well suited to commercial-grade designs operating between 0 °C and 70 °C that demand a standardized LPDDR memory component with integrated refresh and data-strobe features for efficient board-level memory integration.

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