M53D256328A-5BG2F

The M53D256328A-5BG2F is a 256 Mbit LPDDR SDRAM organized as 2M × 32 with a 200 MHz rating and 1.7 V–1.95 V supply range. It implements an internal pipelined double-data-rate architecture with two data transfers per clock cycle and is specified as a JEDEC-compliant mobile DDR SDRAM device.

Designed for commercial-grade mobile DDR memory requirements, the device provides selectable burst lengths, four-bank operation and standard LPDDR control signals (CLK/CLK, DQS, DM) in a compact 144-ball FBGA (12×12) package.

Key Features

• Core Architecture Internal pipelined double-data-rate design enabling two data accesses per clock cycle; differential clock inputs (CLK/CLK) and bi-directional data strobe (DQS).
• Memory Organization & Timing 2M × 32 organization (268.4 Mbit nominal), CAS Latency = 3, access time 5 ns, write cycle time (word/page) 15 ns, and support for burst lengths 2, 4, 8, and 16.
• Power and Refresh VDD/VDDQ operating range 1.7 V to 1.95 V with auto and self refresh support and a 15.6 µs refresh interval (64 ms refresh period, 4K cycles).
• Advanced Memory Functions Four-bank operation, PASR (Partial Array Self Refresh), internal TCSR (Temperature Compensated Self Refresh), and Drive Strength (DS) control options.
• Interface and I/O Parallel memory interface with DQ0–DQ31 data pins, DM write mask inputs, LVCMOS-compatible inputs, and DQS alignment (edge-aligned for READ, center-aligned for WRITE).
• Package & Mounting 144‑ball FBGA (12 mm × 12 mm × 1.4 mm body, 0.8 mm ball pitch) surface-mount package suitable for compact system designs.
• Qualification & Compliance JEDEC-standard mobile DDR SDRAM and RoHS compliant; grade specified as Commercial with operating temperature 0 °C to 70 °C.

Typical Applications

• Mobile devices — Mobile DDR SDRAM implementation for handheld and battery-powered devices that require low-voltage DDR memory in a compact package.
• Portable multimedia — Memory subsystem for compact multimedia modules where burst transfers and double-data-rate throughput are required.
• Embedded systems — On-board system memory for commercial embedded designs that need JEDEC-compliant LPDDR in a 144‑FBGA footprint.

Unique Advantages

• JEDEC-compliant LPDDR — Standardized mobile DDR feature set simplifies integration with JEDEC-compatible controllers and designs.
• Compact FBGA package — 144-ball, 12×12 FBGA reduces PCB area while providing full 32-bit data width and necessary control pins.
• Flexible timing and burst options — CAS Latency 3 and programmable burst lengths (2/4/8/16) accommodate a range of memory access patterns.
• Low-voltage operation — 1.7 V–1.95 V supply range enabling compatibility with 1.8 V-class system rails.
• Self-refresh and temperature compensation — PASR and internal TCSR support for reliable refresh behavior across operating conditions.
• RoHS compliant — Meets environmental lead-free requirements for commercial product assemblies.

Why Choose M53D256328A-5BG2F?

The M53D256328A-5BG2F provides a JEDEC-standard LPDDR memory building block that balances compact footprint, double-data-rate performance and low-voltage operation for commercial mobile and embedded designs. Its 2M×32 organization, four-bank operation and flexible burst/timing options make it suitable where predictable DDR behavior and compact packaging are required.

Manufactured by ESMT and specified for commercial temperature ranges, this device is appropriate for system designers seeking a standardized, RoHS-compliant LPDDR SDRAM solution in a 144‑ball FBGA package.

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