M53D256328A-7.5BG2F

The M53D256328A-7.5BG2F is a JEDEC-standard Mobile LPDDR SDRAM device from ESMT, organized as 2M × 32 and offered in a 144-ball FBGA (12×12) package. It implements an internal pipelined double-data-rate architecture with bi-directional data strobe (DQS) and differential clock inputs for DDR operation.

Designed for low-voltage DDR memory requirements, this device supports a 1.7V–1.95V supply range and a maximum operating clock of 133 MHz. Its combination of JEDEC compliance, compact FBGA packaging, and built-in low-power refresh features make it suitable for mobile-focused designs requiring a parallel LPDDR memory interface.

Key Features

• Core architecture Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle; supports differential clock inputs (CLK / CLK̄) and bi-directional DQS.
• Memory organization & performance 256Mbit device organized as 2M × 32 with CAS latency 3, burst lengths 2/4/8/16, and support for sequential and interleave burst types. Rated for operation at 133 MHz (–7.5 variant).
• Timing Fast access characteristics with listed access time of 6 ns and write cycle / word page timing of 15 ns.
• Low-voltage operation VDD / VDDQ operating range 1.7V to 1.95V to support low-power system designs.
• Low-power refresh and thermal features Auto and self-refresh support, PASR (Partial Array Self Refresh) and internal TCSR (Temperature Compensated Self Refresh) for improved standby power management. 15.6 µs refresh interval (64ms refresh period, 4K cycle).
• Interface and signal behavior Data mask (DM) for write masking, DQS edge-aligned for READ and center-aligned for WRITE, and LVCMOS-compatible inputs. All inputs except data & DM are sampled on the rising clock edge.
• Package & mounting 144-ball FCBGA (12×12 mm body, 0.8 mm ball pitch) surface-mount package suitable for high-density board assembly.
• Qualification & compliance JEDEC-standard device grade (commercial) and RoHS compliant.
• Operating range Commercial operating temperature range 0 °C to 70 °C.

Typical Applications

• Mobile devices Mobile DDR SDRAM architecture and low-voltage operation suit handheld and mobile platform memory requirements.
• Compact system memory 144-ball FBGA package enables high-density board layouts where a compact parallel LPDDR memory is required.
• Low-power designs Features such as PASR, TCSR and self-refresh support make the device appropriate for systems that need controlled standby power.

Unique Advantages

• JEDEC-standard compatibility: Ensures predictable DDR behavior and interoperability for JEDEC-compliant memory interfaces.
• Low-voltage support: 1.7V–1.95V supply range reduces power draw compared with higher-voltage alternatives, aiding thermal and battery-constrained designs.
• Flexible performance control: CAS latency 3 and selectable burst lengths (2/4/8/16) provide designers with options to tune access patterns and throughput.
• Built-in low-power refresh modes: PASR and internal temperature-compensated self-refresh simplify power management during idle periods.
• Compact FBGA package: 144-ball FCBGA (12×12) footprint supports high-density placement on surface-mount PCBs.
• Clear timing characteristics: Documented access time and write-cycle timing (6 ns access, 15 ns write cycle) assist timing closure and system integration.

Why Choose M53D256328A-7.5BG2F?

The M53D256328A-7.5BG2F positions itself as a practical LPDDR option for designs that require JEDEC-standard mobile DDR memory in a low-voltage, compact FBGA package. Its combination of DDR architecture, defined timing parameters, and low-power refresh features supports reliable integration into mobile and space-constrained systems.

With ESMT’s M53D256328A series characteristics and RoHS compliance, this part is suited for engineers seeking a commercially graded LPDDR device with documented electrical, timing and package data for supply-voltage-sensitive designs.

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