M53D5121632A-7.5BG

The M53D5121632A-7.5BG is an ESMT LPDDR SDRAM device offering a 512Mbit organization as 8M×16 with four internal banks and a 60-ball UFBGA package. It implements a pipelined double-data-rate architecture with bi-directional data strobe support for DDR transfers, and is specified for 1.7V–1.95V operation and a maximum frequency of 133 MHz.

This part is targeted at Mobile DDR SDRAM applications and other compact, low-voltage systems that require a small BGA footprint, selectable CAS latencies, and flexible burst operation.

Key Features

• Core Architecture Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle; differential clock inputs (CLK and CLK̅) are supported.
• Memory Organization 8M × 16 organization with four bank operation and a total density presented as 512Mbit (8M×16).
• Performance Options Specified for 133 MHz operation (device suffix -7.5BG); supports CAS latency options of 2 and 3 and burst lengths of 2, 4, 8 and 16 with sequential and interleave burst types.
• Data I/O and Timing Bi-directional data strobe (DQS) with edge-aligned DQS for READ and center-aligned DQS for WRITE; all inputs except data and DM sampled on the rising clock edge.
• Power and Low-Power Modes VDD/VDDQ operating range 1.7V–1.95V and support for Deep Power Down (DPD), auto & self refresh, PASR (Partial Array Self Refresh), and TCSR (Temperature Compensated Self Refresh).
• Interface and Signal Support LVCMOS-compatible inputs, data mask (DM) for write masking, and drive strength (DS) control.
• Package and Mounting 60-ball UFBGA (60-BGA, 8×13 ball map, 8 mm × 9 mm × 1.0 mm body, 0.8 mm pitch), surface-mount package optimized for compact board designs.
• Operating Range and Qualification Commercial grade, JEDEC qualification, operating ambient temperature 0 °C to 70 °C.

Typical Applications

• Mobile DDR memory systems — Suited to Mobile DDR SDRAM designs requiring low-voltage DDR operation and compact BGA footprint.
• Compact embedded devices — Provides DDR throughput and selectable latencies for space-constrained systems that use 1.7V–1.95V memory supplies.
• Low-power handheld modules — Deep Power Down and self-refresh features help reduce standby energy in battery-powered applications.

Unique Advantages

• Low-voltage operation: 1.7V–1.95V VDD/VDDQ supports reduced power consumption compared with higher-voltage memories.
• DDR data throughput: Pipelined double-data-rate architecture and bi-directional DQS deliver two data transfers per clock cycle for efficient bandwidth use at 133 MHz.
• Flexible timing and burst control: CAS latency 2/3 and multiple burst lengths (2/4/8/16) enable designers to tune performance for specific workloads.
• Advanced low-power features: Supports Deep Power Down, PASR and TCSR to optimize power management and refresh behavior in standby modes.
• Compact, assembly-friendly package: 60-ball UFBGA with a 0.8 mm pitch provides a small footprint for high-density boards and surface-mount assembly.
• Standards-based compliance: JEDEC-standard Mobile DDR features and LVCMOS-compatible inputs simplify system integration.

Why Choose M53D5121632A-7.5BG?

The M53D5121632A-7.5BG positions itself as a compact, low-voltage LPDDR memory solution that balances DDR transfer capability with power-saving features and a small 60-ball BGA footprint. Its JEDEC-aligned architecture, selectable CAS latencies, and multiple low-power modes make it suitable for designers targeting Mobile DDR applications and space-constrained systems operating within commercial temperature ranges.

Choose this device when you need a verified Mobile DDR SDRAM building block that offers flexible timing, robust refresh control, and a surface-mount package for high-density board layouts, backed by ESMT documentation and JEDEC qualification.

Request a quote or submit a procurement inquiry to obtain pricing, lead time, and availability for the M53D5121632A-7.5BG.