M53D5123216A-6BG

The M53D5123216A-6BG from ESMT is a 512 Mbit (4M × 32) Mobile LPDDR SDRAM device implemented in a 144‑ball FBGA (12×12 mm) package. It uses an internal pipelined double-data-rate architecture to provide two data accesses per clock cycle and supports a parallel 32‑bit data interface at a maximum specified clock frequency of 166 MHz.

Designed for space‑conscious, low‑voltage memory applications, the device includes on‑chip self‑refresh and low‑power modes (including Deep Power Down, PASR and TCSR) and is supplied for commercial temperature operation (0 °C to 70 °C).

Key Features

• Memory Core & Organization 512 Mbit total capacity organized as 4M × 32 with four internal banks.
• DDR Architecture Internal pipelined double‑data‑rate architecture enabling two data transfers per clock cycle; bi‑directional DQS with read edge‑alignment and write center‑alignment.
• Timing & Performance Rated for 166 MHz operation; CAS latency options 2 and 3; burst length support for 2, 4, 8 and 16. Typical access time listed as 5.5 ns and write cycle time (word page) 15 ns in the specification set.
• Voltage & Power Management VDD / VDDQ operating range 1.7 V to 1.95 V with Deep Power Down (DPD), Partial Array Self Refresh (PASR) and Temperature Compensated Self Refresh (TCSR) for reduced power in idle states.
• Interface & Control Differential clock inputs (CLK/CLK̄), LVCMOS‑compatible inputs, data mask (DM) for write masking, and standard control signals (RAS, CAS, WE, CS, CKE).
• Refresh & Reliability Auto and self refresh supported with a 7.8 μs interval (64 ms refresh period, 8K cycles).
• Package & Mounting 144‑ball UFBGA / FCBGA (12×12 mm, 0.8 mm pitch) surface‑mount package; supplier device package 144‑FBGA (12×12).
• Standards & Compliance JEDEC‑standard Mobile DDR SDRAM design and RoHS compliant.
• Operating Range Commercial grade operation from 0 °C to 70 °C.

Typical Applications

• Mobile devices and handheld systems Low‑voltage LPDDR configuration and DDR data rates support compact mobile memory subsystems.
• Portable multimedia Burst and latency options (BL = 2/4/8/16; CL = 2,3) enable efficient streaming and framebuffer use.
• Embedded consumer electronics Compact 144‑ball FBGA package and surface‑mount mounting suit small form‑factor embedded boards.
• Battery‑sensitive applications Deep Power Down, PASR and TCSR modes reduce standby power for battery‑operated products.

Unique Advantages

• Low‑voltage operation: 1.7 V to 1.95 V supply range reduces system power compared with higher‑voltage memories.
• Double‑data‑rate transfers: Two data accesses per clock cycle and bi‑directional DQS support efficient read/write throughput.
• Flexible timing and burst control: Multiple CAS latency and burst length options allow designers to tune performance vs. power for specific workloads.
• Comprehensive low‑power modes: Deep Power Down, PASR and TCSR combined with auto/self refresh enable optimized power management strategies.
• JEDEC standard conformity: Standard mobile DDR feature set (CLK/CLK̄ differential clocking, control signals and refresh timing) simplifies system integration.
• Compact, industry‑standard package: 144‑ball FBGA (12×12 mm) provides a small footprint for space‑constrained board layouts.

Why Choose M53D5123216A-6BG?

The M53D5123216A-6BG delivers a compact, JEDEC‑standard LPDDR memory option with a 512 Mbit capacity and 32‑bit parallel interface, suitable for designs that require low‑voltage DDR operation in a small FBGA package. Its DDR architecture, selectable timing, and multiple low‑power modes provide designers with a balance of performance and power efficiency.

Manufactured by ESMT and specified for commercial temperature operation, this device is appropriate for embedded and mobile applications where footprint, power management, and standard DDR behavior are primary design considerations.

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