M53D5121632A-5BG

The M53D5121632A-5BG is a 536.9 Mbit LPDDR SDRAM device organized as 8M×16, delivered in a compact 60‑ball UFBGA package for surface‑mount assembly. It implements an internal pipelined double‑data‑rate architecture with bi‑directional data strobes and differential clock inputs, enabling two data accesses per clock cycle.

Designed for space‑constrained, low‑voltage systems, this JEDEC‑qualified DRAM supports low‑voltage operation (VDD/VDDQ = 1.7 V to 1.95 V) and power‑management features such as Deep Power Down, auto/self refresh, PASR and temperature‑compensated self refresh to help manage power and thermal behavior in mobile and embedded applications.

Key Features

• Core / Architecture Internal pipelined double‑data‑rate (DDR) architecture providing two data accesses per clock cycle; four bank operation with CAS latency options of 2 and 3.
• Memory Organization 536.9 Mbit total capacity, organized as 8M×16 with DQ0–DQ15 data lines and LDQS/UDQS bi‑directional data strobes.
• Performance & Timing 200 MHz maximum clock frequency (‑5BG grade), typical access time 5 ns and write cycle time (word/page) 15 ns as specified.
• Power Management VDD/VDDQ = 1.7 V – 1.95 V operation; supports Deep Power Down (DPD), auto & self refresh, PASR and TCSR for optimized power use.
• Interface & Signal Parallel memory interface with differential CLK/CLK inputs, single‑ended LVCMOS compatible command/address inputs; data mask (DM) for write masking.
• Burst & Access Modes Burst lengths 2/4/8/16 with sequential and interleave burst types; DQS edge‑aligned for READ and center‑aligned for WRITE.
• Package & Mounting 60‑ball UFBGA (60‑BGA, 8×13 footprint, 0.8 mm ball pitch), surface mount; compact form factor for tight board layouts.
• Environmental & Qualification JEDEC qualification and RoHS‑compliant; operating ambient temperature 0 °C to 70 °C.

Typical Applications

• Mobile and portable devices Low‑voltage operation and DDR data rates suit memory subsystems in handheld and battery‑powered equipment.
• Consumer electronics Compact 60‑ball BGA package and multi‑bank DDR architecture enable small footprint designs with responsive memory access.
• Embedded systems JEDEC compliance and standard parallel interface simplify integration into embedded controllers and compact computing modules.
• Handheld instrumentation Power‑management features (DPD, auto/self refresh, PASR, TCSR) help extend runtime and control thermal behavior in portable instruments.

Unique Advantages

• Low‑voltage operation: Operates across VDD/VDDQ = 1.7 V to 1.95 V to support designs targeting 1.8 V systems and lower power budgets.
• DDR pipelined data path: Internal pipelined DDR architecture with two data accesses per clock cycle increases effective throughput for burst transfers.
• Advanced power modes: Deep Power Down, auto/self refresh, PASR and TCSR provide flexible power management options to reduce standby and active power.
• Small BGA footprint: 60‑ball UFBGA (60‑BGA, 8×13) surface‑mount package saves PCB area while providing a full 16‑bit data bus.
• Predictable timing: Documented access time (5 ns) and write cycle time (15 ns) with a defined 200 MHz grade for system timing and memory controller design.
• Standards compliance: JEDEC qualification and LVCMOS‑compatible inputs simplify system validation and interoperability.

Why Choose M53D5121632A-5BG?

The M53D5121632A-5BG combines a compact 60‑ball UFBGA package with a JEDEC‑qualified LPDDR SDRAM architecture to deliver a 536.9 Mbit memory solution suited to low‑voltage, space‑constrained designs. Its DDR pipelined datapath, multi‑bank operation and selectable CAS latencies provide designers with a balance of throughput and predictable timing.

With integrated power‑management features and a defined operating range (1.7 V–1.95 V, 0 °C–70 °C), this device is appropriate for consumer, mobile and embedded applications that require a small footprint, controlled power consumption and industry‑standard memory behavior from a trusted ESMT memory family.

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