M53D5123216A-5BG
| Part Description |
LPDDR SDRAM 512Mbit (4M×32) 1.8V 200MHz 144-Ball FBGA |
|---|---|
| Quantity | 1,472 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 144-FBGA (12x12) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5 ns | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 1.7V ~ 1.95V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 15 ns | Packaging | 144-UFBGA, FCBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.28 |
Overview of M53D5123216A-5BG – LPDDR SDRAM 512Mbit (4M×32) 1.8V 200MHz 144-Ball FBGA
The M53D5123216A-5BG is a 512Mbit Mobile LPDDR SDRAM organized as 4M×32 with four internal banks, designed for low-voltage, double-data-rate memory applications. It implements an internal pipelined DDR architecture with bi-directional data strobe (DQS) and JEDEC-standard signaling for compact, high-throughput embedded memory.
This device targets mobile and space-constrained systems that require parallel DDR memory at 1.7–1.95V operation and up to 200MHz clock frequency, delivering flexible timing, burst and low-power modes to support battery-powered and cost-sensitive commercial designs.
Key Features
- Core Architecture Internal pipelined double-data-rate design supporting two data accesses per clock cycle, differential clock inputs (CLK/CLK̄) and no DLL; CLK to DQS is not synchronized.
- Memory Organization & Timing 536.9 Mbit capacity (4M×32), four-bank operation with CAS latency options of 2 and 3; burst lengths of 2, 4, 8 and 16 for flexible data transfers.
- Performance Maximum frequency 200MHz (specified -5BG grade); access time 5 ns and write cycle time (word/page) of 15 ns.
- Power & Low-Power Modes VDD/VDDQ supply range 1.7V–1.95V with Deep Power Down (DPD), Auto & Self Refresh, PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh) to reduce standby energy.
- Interface & I/O Parallel memory interface with bi-directional DQS (edge-aligned for READ, center-aligned for WRITE), data mask (DM) for write masking, and LVCMOS-compatible inputs.
- Reliability & Refresh JEDEC-standard refresh architecture with 7.8 μs refresh interval (64ms refresh period, 8K cycle) to maintain data integrity.
- Package & Mounting Surface-mount 144-ball FBGA (12×12 mm, 0.8 mm pitch) package, Pb-free, suitable for compact PCB layouts.
- Grade & Operating Range Commercial grade, qualified to JEDEC standards with an operating temperature range of 0°C to 70°C and RoHS compliance.
Typical Applications
- Mobile Devices — Mobile DDR SDRAM architecture targets handheld and portable products that require low-voltage DDR memory.
- Portable Consumer Electronics — Compact FBGA package and low-power modes support space- and energy-constrained consumer designs.
- Embedded Systems — Parallel DDR interface and flexible burst/timing options suit embedded modules and controllers needing predictable memory performance.
- Battery-Powered Designs — Deep Power Down, PASR and TCSR features reduce standby power for battery-operated equipment.
Unique Advantages
- Double-Data-Rate Throughput — Two data accesses per clock cycle with DQS support maximizes effective bandwidth at each clock edge.
- Flexible Timing and Burst Control — CAS latency options and multiple burst lengths let designers tune transfers for latency or sustained throughput.
- Low-Voltage Operation — 1.7V–1.95V VDD/VDDQ range enables lower power budgets compared with higher-voltage memories.
- Comprehensive Low-Power Modes — Deep Power Down plus PASR and TCSR provide multiple strategies to minimize energy use in standby and partial-refresh scenarios.
- Compact, PCB-Friendly Package — 144-ball FBGA (12×12) provides a high-density footprint for space-constrained designs.
- JEDEC-Compliant — Standardized signaling and refresh behavior simplify integration with JEDEC-based memory controllers.
Why Choose M53D5123216A-5BG?
The M53D5123216A-5BG combines Mobile DDR SDRAM architecture with JEDEC-standard signaling, providing a 512Mbit 4M×32 memory solution that balances throughput and power efficiency at a 1.8V nominal supply and up to 200MHz clocking. Its feature set — including multiple low-power modes, flexible burst/timing options and a compact 144-ball FBGA — makes it well suited for commercial mobile, portable and embedded designs that require standard DDR behavior in a small footprint.
Manufactured by ESMT and offered in a commercial-grade specification with RoHS compliance and a 0°C to 70°C operating range, this device targets engineers and procurement teams seeking a JEDEC-qualified LPDDR memory component with documented timing, refresh and interface characteristics.
Request a quote or contact sales to discuss pricing, availability and volume options for M53D5123216A-5BG.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A