M52D64322A (2S)
| Part Description |
LPSDR SDRAM 1.8V |
|---|---|
| Quantity | 467 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 54 Ball FBGA | Memory Format | DRAM | Technology | LPSDR SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 15 ns | Packaging | 54 Ball FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 2M x 32 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of M52D64322A (2S) – LPSDR SDRAM 1.8V
The M52D64322A (2S) is a volatile LPSDR SDRAM memory device from ESMT, organized as 2M × 32 and presented in a parallel DRAM format. It is a commercial-grade, JEDEC-qualified memory product intended for use where compact, mid-density SDRAM is required.
With a 67.11 Mbit capacity, a 166 MHz clock rating and a 15 ns write cycle (word/page), this device targets commercial memory applications that benefit from predictable timing and a compact BGA footprint.
Key Features
- Memory Architecture 2M × 32 organization delivering 67.11 Mbit of volatile DRAM capacity in a parallel memory format.
- Performance 166 MHz clock frequency and a 15 ns write cycle time (word/page) for deterministic timing characteristics.
- Technology LPSDR SDRAM technology in a standard DRAM format.
- Power 2.5V nominal supply voltage as specified for the device.
- Package & Mounting 54 Ball FBGA package supplied for surface-mount PCB assembly (54 Ball FBGA, surface mount).
- Qualification & Grade JEDEC-qualified, commercial grade device with RoHS compliance.
- Operating Range Commercial operating temperature range of 0 °C to 70 °C.
Typical Applications
- Commercial Embedded Systems Provides mid-density SDRAM for embedded controllers and subsystem memory in commercial devices.
- Consumer Electronics Suitable for consumer products requiring dependable parallel DRAM storage in a compact package.
- Networking & Communications Equipment Fits applications that require predictable SDRAM timing and JEDEC qualification for system memory.
Unique Advantages
- Compact FBGA Footprint: 54 Ball FBGA package reduces board area while supporting surface-mount assembly.
- JEDEC Qualification: Conforms to JEDEC standards for predictable electrical and timing behavior across designs.
- Deterministic Timing: 166 MHz clock and 15 ns write cycle time facilitate straightforward timing analysis and integration.
- Mid-Density Capacity: 67.11 Mbit and 2M × 32 organization provide a balance of capacity and addressability for commercial designs.
- RoHS Compliant: Environmentally compliant for designs requiring lead-free components.
- Commercial Temperature Range: Rated 0 °C to 70 °C for standard commercial operating environments.
Why Choose M52D64322A (2S)?
The M52D64322A (2S) positions itself as a JEDEC-qualified, commercial-grade LPSDR SDRAM option that combines mid-density capacity with deterministic timing and a compact FBGA package. Its 2M × 32 organization, 166 MHz clock rating and 15 ns write cycle time make it suitable for designs that need predictable DRAM behavior in a surface-mount form factor.
Manufactured by ESMT and offered with RoHS compliance, this device is appropriate for procurement into commercial embedded, consumer, and communications products where standardized qualification and a compact package support reliable integration and supply-chain consistency.
Request a quote or submit an inquiry for M52D64322A (2S) to get pricing and availability information for your next design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A