M52D256328A-6BG2F

The M52D256328A-6BG2F is a mobile synchronous DRAM device from ESMT providing 268,435,456 bits (268.4 Mbit) of volatile storage organized as 4 × 2,097,152 words by 32 bits. It is a synchronous, high-data-rate DRAM with LVCMOS-compatible I/O and programmable burst and latency options for use in high-bandwidth, high-performance memory system applications.

Designed for commercial temperature operation and JEDEC qualification, this 1.8 V device is packaged in a compact 90‑ball FBGA (8×13 mm) surface-mount package for space-constrained system designs.

Key Features

• Memory Core 268,435,456 bits (268.4 Mbit) organized as 4 × 2,097,152 × 32 bits, supporting four-bank operation for concurrent bank management.
• Performance Maximum clock frequency 166 MHz with CAS Latency 3, 5.4 ns access time and 12 ns write cycle time (word/page) to support synchronous, cyclic access patterns.
• Burst and Access Flexibility Programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential & interleave) for adaptable data transfer profiling.
• Low-Voltage Operation 1.7 V to 1.95 V supply range (nominal 1.8 V) for lower-power designs and compatibility with mobile power domains.
• Interface and Control LVCMOS-compatible system I/O, synchronous operation with inputs sampled on the rising edge of CLK, and support for standard SDRAM control signals (CLK, CKE, CS, RAS, CAS, WE).
• Refresh & Power Management Auto and self-refresh support with a 64 ms refresh period (4K cycle), plus PASR (Partial Array Self Refresh) and TCSR (Temperature Compensated Self Refresh) features.
• Signal & Drive Options Driver Strength (DS) control and DQM masking for byte-lane masking and signal tuning.
• Package & Mounting 90‑ball FBGA (8 mm × 13 mm × 1.2 mm body, 0.8 mm ball pitch), surface-mount package designed for compact PCB integration.
• Qualification & Compliance JEDEC qualification and RoHS-compliant (Pb-free) manufacturing.
• Commercial Temperature Range Rated for 0 °C to 70 °C operation.

Typical Applications

• Mobile and handheld systems — Mobile SDRAM organization and low-voltage operation suit compact mobile platforms requiring synchronous high-rate memory.
• High-bandwidth system memory — Programmable burst lengths and four-bank architecture support high-throughput buffering in performance-oriented designs.
• Embedded consumer electronics — Compact 90‑ball FBGA package and JEDEC qualification make the device suitable for space-constrained consumer and portable devices operating in commercial temperature ranges.

Unique Advantages

• Synchronous, high-data-rate operation: Clocked I/O with inputs sampled on the clock edge enables predictable timing and cycle-to-cycle data transactions.
• Flexible burst control: Multiple burst lengths and types provide designers control over data transfer granularity and bus utilization.
• Integrated refresh and low-power modes: Auto/self-refresh plus PASR and TCSR help manage refresh overhead and power in battery-powered or low-power systems.
• Compact FBGA footprint: 90-ball FBGA (8×13 mm) reduces PCB area while supporting high pin density for data and power distribution.
• JEDEC-qualified commercial part: Standard qualification and RoHS compliance support predictable integration and regulatory requirements for commercial designs.

Why Choose M52D256328A-6BG2F?

The M52D256328A-6BG2F positions itself as a synchronous, mobile SDRAM solution for designs requiring a combination of predictable timing, configurable burst behavior and low-voltage operation. Its four-bank 2M×32 organization, CAS Latency 3 support and programmable burst parameters deliver the flexibility needed for high-bandwidth embedded memory applications.

With JEDEC qualification, RoHS compliance and a compact 90‑ball FBGA package, this device is suited for engineers designing commercial temperature mobile and consumer systems that need a standardized, surface-mount DRAM option with integrated refresh and power-management features.

Request a quote or submit an inquiry today to obtain pricing and availability for the M52D256328A-6BG2F.