M54D2G16128A

The M54D2G16128A from ESMT is a 2.147 Gbit LPDDR2 SDRAM device implemented as 128M × 16 with eight internal banks and a 4n prefetch architecture. It provides a low-power, double data rate DRAM core with a differential byte-wise data strobe and programmable timing options for use in embedded memory designs requiring compact, JEDEC-compliant LPDDR2 memory.

Key Features

• Memory Architecture — 2.147 Gbit organized as 128M × 16 with 8 banks and 4n prefetch, delivering a standardized LPDDR2 memory structure.
• Performance — Supports a maximum clock frequency of 533 MHz (data rate up to 1066 Mb/s per pin for the 1.8V/1.2V variant); access time 5.5 ns and write cycle time (word page) 15 ns.
• LPDDR2 Compliance — JEDEC LPDDR2-S4B compliance and HSUL_12 interface (High Speed Unterminated Logic 1.2V).
• Power Supply — VDD1 specified at 1.7–1.95 V and VDD2 / VDDCA / VDDQ specified at 1.14–1.3 V (ordering variants include 1.8 V / 1.2 V nominal levels).
• Programmable Timing and Burst — Programmable read latency (RL) and write latency (WL), and programmable burst lengths of 4, 8, or 16 for flexible performance tuning.
• Low-Power Modes — Supports Deep Power Down (DPD), Partial Array Self Refresh (PASR), Temperature Compensated Self Refresh (TCSR) via built-in temperature sensor, and clock stop capability for power savings.
• Refresh and Reliability — Pre-bank refresh for concurrent operation and JEDEC qualification for standardized interoperability.
• Interface and I/O — Multiplexed command/address inputs sampled on CK edges; bidirectional/differential DQS per byte (DQS_t / DQS_c).
• Package and Mounting — 134-ball BGA surface-mount package (10 mm × 11.5 mm × 1.0 mm body, 0.65 mm ball pitch).
• Operating Range & Compliance — Commercial grade with operating temperature −25 °C to 85 °C and RoHS compliant.

Unique Advantages

• JEDEC-compliant LPDDR2 implementation — Ensures predictable behavior and compatibility with LPDDR2 system designs that reference JEDEC LPDDR2-S4B.
• Configurable performance — Programmable RL/WL and selectable burst lengths enable tuning for system latency and throughput trade-offs.
• Low-power feature set — PASR, TCSR, Deep Power Down and clock stop reduce standby power and support energy-conscious designs.
• Compact BGA package — 134-ball BGA offers a high-density surface-mount solution suitable for space-constrained assemblies.
• Robust timing — 533 MHz clock support and documented access/write timing figures (5.5 ns access, 15 ns write cycle) provide clear performance targets for system integration.
• Supplier backing — ESMT documentation and JEDEC qualification provide datasheet-backed integration guidance and compliance information.

Why Choose M54D2G16128A?

The M54D2G16128A positions itself as a compact, JEDEC-compliant LPDDR2 memory device that balances density (2.147 Gbit) with configurable timing and low-power capabilities. Its programmable latencies, selectable burst lengths and advanced low-power modes make it suitable for embedded systems and designs that require predictable LPDDR2 behavior and efficient power management.

Engineers specifying this part will benefit from clear electrical and timing parameters, a compact 134-ball BGA footprint, and commercial temperature operation with RoHS compliance—facilitating straightforward integration into LPDDR2-capable platforms.

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