M54D2G3264A (2C)
| Part Description |
Ind. -40~85°C, LPDDR2, 1.8V/1.2V |
|---|---|
| Quantity | 1,479 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 134 Ball BGA | Memory Format | DRAM | Technology | LPDDR2 SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 5.5 ns | Grade | Industrial | ||
| Clock Frequency | 533 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 134 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 64M x 32 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of M54D2G3264A (2C) – Ind. -40~85°C, LPDDR2, 1.8V/1.2V
The M54D2G3264A (2C) is an industrial-grade LPDDR2 SDRAM device from ESMT, offered as part of the ESMT LPDDR2 SDRAM M54D2G3264A (2C) series. It provides 2.147 Gbit of volatile DRAM memory organized as 64M × 32 with a parallel memory interface and JEDEC qualification.
Designed for temperature-sensitive deployments, the device lists an operating temperature range of −40 °C to 85 °C and is supplied in a 134 Ball BGA surface-mount package. Key performance parameters provided include a 533 MHz clock frequency, 5.5 ns access time and a 15 ns write cycle time (word page).
Key Features
- Memory Technology: LPDDR2 SDRAM architecture offering volatile DRAM storage organized as 64M × 32 for 2.147 Gbit capacity.
- Performance: 533 MHz clock frequency with a 5.5 ns access time and 15 ns write cycle time (word page), suitable for high-speed memory operations where these metrics are required.
- Interface: Parallel memory interface capability consistent with the device’s organization and LPDDR2 architecture.
- Package & Mounting: 134 Ball BGA package in a surface-mount format for compact board-level integration.
- Industrial Grade & Temperature Range: Rated for operating temperatures from −40 °C to 85 °C for use in industrial environments.
- Qualification & Compliance: JEDEC-qualified device and RoHS compliant.
- Supply Voltage Information: Product name references 1.8V/1.2V; specifications also list a voltage supply value of 2.5V as provided in the product data.
Unique Advantages
- Industrial temperature support: The −40 °C to 85 °C operating range targets applications requiring extended thermal reliability.
- JEDEC qualification: Conformance to JEDEC standards provides a baseline of interoperability and specification consistency.
- High-density memory: 2.147 Gbit capacity in a 64M × 32 organization enables significant on-board DRAM storage in a single package.
- Compact BGA package: 134 Ball BGA surface-mount packaging supports space-constrained board designs and modern assembly processes.
- Clear performance parameters: Published clock frequency, access time, and write cycle time allow engineers to evaluate latency and throughput characteristics directly from the provided specifications.
- RoHS compliant: Meets RoHS requirements as stated in the product data.
Why Choose M54D2G3264A (2C)?
Choose the M54D2G3264A (2C) when you need an industrial-grade LPDDR2 memory device with documented performance metrics and JEDEC qualification. Its 2.147 Gbit density, 533 MHz clock rate, and compact 134 Ball BGA footprint make it a suitable option for designs requiring measurable speed, capacity, and a surface-mount form factor within the stated temperature range.
This device fits projects and customers prioritizing standardized memory specifications, industrial temperature capability, and clear, verifiable electrical and timing data. The combination of capacity, packaging, and JEDEC qualification supports robust integration into applicable embedded and industrial designs.
Request a quote or submit an inquiry for pricing and availability of the M54D2G3264A (2C) to move your design forward with documented LPDDR2 memory specifications.
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