M54D1G3232A (2G)

The M54D1G3232A (2G) is a LPDDR2 SDRAM device with a memory size of 1.074 Gbit organized as 32M × 32. It implements LPDDR2 architecture including 4n prefetch and an 8-bank organization to support double data rate operation.

This device targets low-voltage, high-bandwidth memory applications that require programmable timing, low-power modes and industry-standard JEDEC LPDDR2 compliance while operating across a commercial temperature range.

Key Features

• Core & Memory Architecture 4n prefetch architecture with 8 banks; memory organization is 32M × 32 and total capacity is 1.074 Gbit. Access time is specified at 5.5 ns and write cycle time (word page) is 15 ns.
• Performance Supports a clock frequency of 533 MHz and a DDR data rate of 1066 Mb/s per pin (ordering information for the 1.8 V / 1.2 V variant specifies this operating point).
• Power and Voltage Supports LPDDR2 supply domains with VDD1 in the range 1.7–1.95 V and VDD2 / VDDCA / VDDQ in the range 1.14–1.30 V; available in a 1.8 V / 1.2 V configuration per ordering options.
• Low-Power and Refresh Modes Per-bank refresh for concurrent operation, Partial Array Self Refresh (PASR), Temperature Compensated Self Refresh (TCSR) via a built‑in temperature sensor, and Deep Power Down (DPD) for reduced standby consumption; clock stop capability is also supported.
• Interface and Command Features JEDEC LPDDR2-S4B compliance with HSUL_12 interface; multiplexed DDR command/address inputs, programmable read/write latency (RL/WL), and programmable burst lengths of 4, 8 and 16. Differential clock inputs (CK_t/CK_c) and bidirectional/differential DQS per byte are supported.
• Package and Environmental Surface-mount 134-ball BGA (10 mm × 11.5 mm × 1.0 mm body, 0.65 mm ball pitch), RoHS compliant, operating temperature −25 °C to 85 °C and JEDEC qualification.

Unique Advantages

• JEDEC-compliant LPDDR2 device: Built to LPDDR2-S4B specification for consistent, standards-based behavior across designs.
• High data throughput: 533 MHz clocking with DDR operation delivers up to 1066 Mb/s per pin for bandwidth-sensitive memory paths.
• Low-voltage operation: Supports VDD1 and VDD2 domains in LPDDR2 ranges (including a 1.8 V / 1.2 V configuration), enabling lower-power system designs.
• Flexible timing and burst control: Programmable RL/WL and selectable burst lengths (4/8/16) allow timing optimization for varied system requirements.
• Power management and reliability features: PASR, TCSR, per-bank refresh and Deep Power Down modes support energy-efficient operation and robust refresh strategies.
• Compact BGA package: 134-ball BGA with 0.65 mm pitch provides a manufacturable surface-mount footprint for board-level integration.

Why Choose M54D1G3232A (2G)?

The M54D1G3232A (2G) combines LPDDR2 architecture, JEDEC qualification and a clear set of low-power features to meet designs that require high-bandwidth DDR memory with flexible timing and power modes. Its electrical specifications and programmable options make it appropriate for projects that need predictable LPDDR2 behavior and configurable performance.

With a 134-ball BGA package, defined operating temperature range and RoHS compliance, this device offers a balance of performance, integration and environmental compliance for commercial embedded systems requiring LPDDR2 SDRAM.

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