M54D5121632A

The M54D5121632A from ESMT is a JEDEC-compliant LPDDR2 SDRAM device organized as 32M × 16 with 4 internal banks, delivering 536.9 Mbit of volatile DRAM capacity. It implements LPDDR2 architecture with a high-speed DDR command/address interface and per-byte differential data strobes for robust high-rate memory transfers.

This device targets commercial embedded designs that require low-voltage DRAM operation, compact BGA packaging, and advanced low-power modes. Key values include high clock capability (533 MHz), programmable latency and burst options, and an industry-standard 134-ball BGA surface-mount package.

Key Features

• Standards & Compliance JEDEC LPDDR2 series device; listed qualification as JEDEC-compliant in product data.
• Memory Organization & Capacity 32M × 16 organization (536.9 Mbit total) with 4 internal banks for flexible row/column addressing and refresh management.
• Performance Supports a clock frequency up to 533 MHz (data rate up to 1066 Mb/s per pin for the 1.8V/1.2V ordering variant). Access time specified at 5.5 ns and write/read timing options with programmable RL/WL.
• Low-Power Architecture LPDDR2 architecture with HSUL_12 interface and multi-rail low-voltage supplies (datasheet ranges: VDD1 = 1.7–1.95 V; VDD2/VDDCA/VDDQ = 1.14–1.3 V). Includes Deep Power Down (DPD), Partial Array Self Refresh (PASR) and Temperature Compensated Self Refresh (TCSR).
• Flexible Data Handling 4n prefetch architecture, multiplexed DDR command/address inputs, programmable burst lengths (4, 8, 16), and bidirectional/differential DQS per byte for reliable timing at high throughput.
• Robust System Features Pre-bank refresh for concurrent operation, programmable driver strength, clock stop capability, and advanced refresh timing controls to support sustained operation across temperature.
• Package & Mounting 134-ball BGA surface-mount package suitable for compact PCB designs; commercial grade with operating range from −25 °C to 85 °C.
• Environmental RoHS compliant.

Unique Advantages

• High-rate DDR operation: 533 MHz clock capability and an ordering variant rated at 1066 Mb/s per pin enable elevated data throughput for bandwidth-sensitive tasks.
• Low-voltage operation: Datasheet-specified supply ranges (VDD1 = 1.7–1.95 V, VDD2/VDDCA/VDDQ = 1.14–1.3 V) and HSUL_12 interface support energy-efficient system designs.
• Advanced low-power modes: Deep Power Down, PASR and TCSR reduce standby power and enable flexible refresh strategies for energy-constrained applications.
• Programmability for timing and drive: Programmable read/write latencies, burst lengths, and driver strength let designers tune performance versus power and signal integrity.
• Compact, industry-standard package: 134-ball BGA surface-mount package offers a small footprint while maintaining JEDEC compliance for straightforward board-level integration.
• Commercial temperature range: Specified operation from −25 °C to 85 °C to meet typical commercial embedded environment requirements.

Why Choose M54D5121632A?

The ESMT M54D5121632A LPDDR2 SDRAM combines JEDEC-compliant LPDDR2 architecture, low-voltage operation, and programmable performance features to serve compact, power-sensitive embedded designs. With a nominal 536.9 Mbit capacity, 32M × 16 organization, 4-bank architecture, and high-rate clock capability, it offers a balanced solution for designs that need compact BGA packaging and flexible memory timing.

This part is suited to commercial-grade applications requiring JEDEC qualification, RoHS compliance, and a broad operating temperature window. Its programmable refresh and power modes, along with per-byte differential data strobes, provide designers with tools to optimize throughput, power consumption, and signal integrity within constrained board real estate.

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